<abstract xmlns="http://www.w3.org/1999/xhtml">In this work, we study the effect of the various substrates on the growth and superconducting properties of NbN thin films grown by using pulsed laser ablation in a N2 + 1%H2 atmosphere on MgO, Al2O3 and Si substrates. Structural and superconducting analyses of the films demonstrate that using MgO and Al2O3 substrates can significantly improve the film properties compared to Si substrate. The X-ray diffraction data indicate that MgO and Al2O3 substrates produce highly oriented superconducting NbN films with large coherent domain size in the out-of plane direction on the order of layer thickness and with a superconducting transition temperature of 13.1 K and 15.2 K, respectively. On the other hand, the NbN film grown on the Si substrate exhibits random polycrystalline orientation. Together with the smallest coherent domain size it leads to the lower critical temperature of 8.3 K. Finally, by using a passivation surface layer we are able to improve superconducting properties of NbN thin film and we observe superconducting transition temperature 16.6 K, the one of the highest value reported so far for 50 nm thick NbN film on sapphire.</abstract>

In this work, we study the effect of the various substrates on the growth and superconducting properties of NbN thin films grown by using pulsed laser ablation in a N2 + 1%H2 atmosphere on MgO, Al2O3 and Si substrates. Structural and superconducting analyses of the films demonstrate that using MgO and Al2O3 substrates can significantly improve the film properties compared to Si substrate. The X-ray diffraction data indicate that MgO and Al2O3 substrates produce highly oriented superconducting NbN films with large coherent domain size in the out-of plane direction on the order of layer thickness and with a superconducting transition temperature of 13.1 K and 15.2 K, respectively. On the other hand, the NbN film grown on the Si substrate exhibits random polycrystalline orientation. Together with the smallest coherent domain size it leads to the lower critical temperature of 8.3 K. Finally, by using a passivation surface layer we are able to improve superconducting properties of NbN thin film and we observe superconducting transition temperature 16.6 K, the one of the highest value reported so far for 50 nm thick NbN film on sapphire.

Superconducting properties of very high quality NbN thin films grown by pulsed laser deposition

Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

In this work, we study the effect of the various substrates on the growth and superconducting properties of NbN thin films grown by using pulsed laser ablation...

Superconducting properties of very high quality NbN thin films grown by pulsed laser deposition

Data publikacji: 28 wrz 2019

Zakres stron: 89 - 94

Otrzymano: 19 mar 2019

DOI: https://doi.org/10.2478/jee-2019-0047

Słowa kluczowe
high-quality NbN films, deposition of niobium nitride, pulsed laser deposition of NbN films

© 2019 Serhii Volkov et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Superconducting properties of very high quality NbN thin films grown by pulsed laser deposition

Data publikacji: 28 wrz 2019

Zakres stron: 89 - 94

Otrzymano: 19 mar 2019

DOI: https://doi.org/10.2478/jee-2019-0047

Słowa kluczowehigh-quality NbN films, deposition of niobium nitride, pulsed laser deposition of NbN films

© 2019 Serhii Volkov et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Słowa kluczowe
high-quality NbN films, deposition of niobium nitride, pulsed laser deposition of NbN films