<abstract xmlns="http://www.w3.org/1999/xhtml"><p>This article discusses the importance of analytical and experimental approaches in Deep level transient Fourier spectroscopy in terms of reliability, to support the current research and the utilization of this technique for complex investigations. An alternative evaluation approach is proposed and validated by relevant experiments. Attention is focused on a GaAs p-i-n structure, the undoped layer induced defect conduction type statement difficulty, accurate evaluation of a dual type majority-minority carrier defect complex and possible limitations of the DLTS experimental technique. Comprehensive evaluation is carried out and the method is discussed in detail. In comparison with reference data, higher precision of calculated activation energies, differences even lower as 10<sup>−3</sup> order of magnitude, were achieved.</p></abstract>

This article discusses the importance of analytical and experimental approaches in Deep level transient Fourier spectroscopy in terms of reliability, to support the current research and the utilization of this technique for complex investigations. An alternative evaluation approach is proposed and validated by relevant experiments. Attention is focused on a GaAs p-i-n structure, the undoped layer induced defect conduction type statement difficulty, accurate evaluation of a dual type majority-minority carrier defect complex and possible limitations of the DLTS experimental technique. Comprehensive evaluation is carried out and the method is discussed in detail. In comparison with reference data, higher precision of calculated activation energies, differences even lower as 10−3 order of magnitude, were achieved.

Reliability improvement of electrically active defect investigations by analytical and experimental deep level transient: Fourier spectroscopy investigations

Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology

Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics

Wroclaw University of Science and Technology

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

This article discusses the importance of analytical and experimental approaches in Deep level transient Fourier spectroscopy in terms of reliability, to...

Reliability improvement of electrically active defect investigations by analytical and experimental deep level transient: Fourier spectroscopy investigations

Data publikacji: 28 wrz 2019

Zakres stron: 27 - 35

Otrzymano: 19 mar 2019

DOI: https://doi.org/10.2478/jee-2019-0038

Słowa kluczowe
deep level transient Fourier spectroscopy, Arrhenius data analysis, electrically active defects, GaAs p-i-n, deep energy level

© 2019 Arpad Kosa et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Reliability improvement of electrically active defect investigations by analytical and experimental deep level transient: Fourier spectroscopy investigations

Data publikacji: 28 wrz 2019

Zakres stron: 27 - 35

Otrzymano: 19 mar 2019

DOI: https://doi.org/10.2478/jee-2019-0038

Słowa kluczowedeep level transient Fourier spectroscopy, Arrhenius data analysis, electrically active defects, GaAs p-i-n, deep energy level

© 2019 Arpad Kosa et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Słowa kluczowe
deep level transient Fourier spectroscopy, Arrhenius data analysis, electrically active defects, GaAs p-i-n, deep energy level