<abstract xmlns="http://www.w3.org/1999/xhtml"><p>GaN-based HEMTs’ high potential is deteriorated by self-heating during the operation, this has influence on the electrical properties as well as device reliability. This work is focused on an average channel temperature determination of power AlGaN/GaN HEMT prepared on SiC substrate using quasi-static and pulsed I-V characterization. There was analyzed the drain current change relation to temperature dependent electrical HEMT parameters such as source resistance, threshold voltage, saturation velocity, resp. leakage current which allows to calculate an average channel temperature versus dissipated power for various ambient temperature. Differential temperature of investigated device with and without heatsink was determined. Obtained results were discussed using simulated spatial temperature distribution.</p></abstract>

GaN-based HEMTs’ high potential is deteriorated by self-heating during the operation, this has influence on the electrical properties as well as device reliability. This work is focused on an average channel temperature determination of power AlGaN/GaN HEMT prepared on SiC substrate using quasi-static and pulsed I-V characterization. There was analyzed the drain current change relation to temperature dependent electrical HEMT parameters such as source resistance, threshold voltage, saturation velocity, resp. leakage current which allows to calculate an average channel temperature versus dissipated power for various ambient temperature. Differential temperature of investigated device with and without heatsink was determined. Obtained results were discussed using simulated spatial temperature distribution.

Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode

Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

GaN-based HEMTs’ high potential is deteriorated by self-heating during the operation, this has influence on the electrical properties as well as device...

Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode

Data publikacji: 14 gru 2018

Zakres stron: 390 - 394

Otrzymano: 09 sie 2018

DOI: https://doi.org/10.2478/jee-2018-0057

Słowa kluczowe
high-electron-mobility transistor (HEMT), AlGaN/GaN

© 2018 Martin Florovič et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode

Data publikacji: 14 gru 2018

Zakres stron: 390 - 394

Otrzymano: 09 sie 2018

DOI: https://doi.org/10.2478/jee-2018-0057

Słowa kluczowehigh-electron-mobility transistor (HEMT), AlGaN/GaN

© 2018 Martin Florovič et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Słowa kluczowe
high-electron-mobility transistor (HEMT), AlGaN/GaN