<abstract xmlns="http://www.w3.org/1999/xhtml"><p>We have designed and verified a new structure for ohmic contacts to p-GaN based on a layer of carbon nanotubes (CNT), reduced graphene oxide (r-GO) and metallic layers of Cr, Pd and Au, namely in configurations Au/Cr/r-GO/CNT/p-GaN and Au/Pd/r-GO/CNT/p-GaN. The effects have been studied of the annealing temperature and the gas ambient upon the electrical properties of the contacts. Annealing of the Au/Pd/r-GO/CNT/p-GaN structure in air at 500°C for 1 minute resulted in linear <italic>I - V</italic> curves measured between planar electrodes on the p-GaN. Hence, addition of r-GO to the CNT interlayer between p-GaN and the metallization layer is a highly promising procedure for further improvements of the ohmic contacts to p-GaN.</p></abstract>

We have designed and verified a new structure for ohmic contacts to p-GaN based on a layer of carbon nanotubes (CNT), reduced graphene oxide (r-GO) and metallic layers of Cr, Pd and Au, namely in configurations Au/Cr/r-GO/CNT/p-GaN and Au/Pd/r-GO/CNT/p-GaN. The effects have been studied of the annealing temperature and the gas ambient upon the electrical properties of the contacts. Annealing of the Au/Pd/r-GO/CNT/p-GaN structure in air at 500°C for 1 minute resulted in linear I - V curves measured between planar electrodes on the p-GaN. Hence, addition of r-GO to the CNT interlayer between p-GaN and the metallization layer is a highly promising procedure for further improvements of the ohmic contacts to p-GaN.

Ohmic Conacts to p-GaN on the Basis of Carbon Nanomaterials

Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia

Danubia NanoTech, s.r.o., Ilkovičova 3, 841 04 Bratislava, Slovakia

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

{"article-title":"Ohmic Conacts to p-GaN on the Basis of Carbon Nanomaterials"}

We have designed and verified a new structure for ohmic contacts to p-GaN based on a layer of carbon nanotubes (CNT), reduced graphene oxide (r-GO) and...

Ohmic Conacts to p-GaN on the Basis of Carbon Nanomaterials

Data publikacji: 31 sty 2015

Zakres stron: 386 - 389

Otrzymano: 15 mar 2014

DOI: https://doi.org/10.2478/jee-2014-0063

© 2015 Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.