<abstract xmlns="http://www.w3.org/1999/xhtml">

<p>An optical probe current sensor module using the Kerr effect of exchange-coupled magnetic film has been fabricated and applied to switching current measurements for IGBT used for the DC-DC converter and the DC-AC inverter of EV/HEV. Since the sensor module using the Kerr effect of the single domain exchange-coupled magnetic film utilizes magnetization rotation only, Barkhausen noise due to domain wall pinning can be excluded. The current sensor consists of a Laser-diode, a polarizer, a Fe-Si/Mn-Ir exchange-coupled film, a quarter-wavelength plate, PIN Photodiodes and a differential amplifier. The current sensor has a current measurement range of ±60 A and a frequency range of DC 200 kHz. The switching current of IGBT has been measured by it.</p>
</abstract>

An optical probe current sensor module using the Kerr effect of exchange-coupled magnetic film has been fabricated and applied to switching current measurements for IGBT used for the DC-DC converter and the DC-AC inverter of EV/HEV. Since the sensor module using the Kerr effect of the single domain exchange-coupled magnetic film utilizes magnetization rotation only, Barkhausen noise due to domain wall pinning can be excluded. The current sensor consists of a Laser-diode, a polarizer, a Fe-Si/Mn-Ir exchange-coupled film, a quarter-wavelength plate, PIN Photodiodes and a differential amplifier. The current sensor has a current measurement range of ±60 A and a frequency range of DC 200 kHz. The switching current of IGBT has been measured by it.

Optical Probe Current Sensor Module Using the Kerr Effect of Exchange-Coupled Magnetic Film and its Application to Igbt Switching Current Measurements

International Journal on Smart Sensing and Intelligent Systems

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

An optical probe current sensor module using the Kerr effect of exchange-coupled magnetic film has been fabricated and applied to switching current...

Optical Probe Current Sensor Module Using the Kerr Effect of Exchange-Coupled Magnetic Film and its Application to Igbt Switching Current Measurements

Data publikacji: 01 cze 2012

Zakres stron: 347 - 361

Przyjęty: 08 maj 2012

DOI: https://doi.org/10.21307/ijssis-2017-485

© 2012 K. Ogawa et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.