Noncontact Method of Conducting Elements “Writing” on Insulating Ge–Sb–Te Matrix Using a Laser Beam
, , oraz
25 cze 2018
O artykule
Data publikacji: 25 cze 2018
Zakres stron: 217 - 224
Otrzymano: 18 wrz 2017
Przyjęty: 28 sty 2018
DOI: https://doi.org/10.1515/msp-2018-0012
Słowa kluczowe
© 2018 S. Khodorov et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
Direct writing of low resistance wires on an amorphous Ge-Sb-Te matrix is reported. A 1342 nm continuous wave laser was used for local heating of the sample to form these wires. Mechanical contact was not needed for making the conducting elements. The properties of the samples were investigated down to 1.4 K and the laser conditions required for the writing of low resistance GST wires were found. The results are discussed with a view to possible applications, such as connectors and electrical wires made only via remote light exposure of the samples to make different resistors and non-linear elements