<abstract xmlns="http://www.w3.org/1999/xhtml">An attempt has been undertaken to produce gallium oxide nanowires by thermal synthesis from metallic gallium source at atmospheric pressure. Silicon substrates of (1 0 0) and (1 1 1) orientation with and without silicon oxide layers (0.5 μm) were used as support. Evaporated thin gold films were deposited on the top of those silicon carriers as a catalytic agent. After thermal treatment by Rapid Thermal Processing RTP (at various temperatures and times), which was applied to make small Au islands with the diameters of about several tens of nanometers, the substrate surfaces were observed by SEM. The Ga2O3 syntheses were made at various conditions: time, temperature and gas mixture were changed. As a result, monoclinic gallium oxide β-Ga2O3 nanostructures with dominant [1 1 1] and [0 0 2] growth directions were grown. The obtained nanostructures of several tens micrometers length were studied by SEM, PL and X-ray methods. </abstract>

An attempt has been undertaken to produce gallium oxide nanowires by thermal synthesis from metallic gallium source at atmospheric pressure. Silicon substrates of (1 0 0) and (1 1 1) orientation with and without silicon oxide layers (0.5 μm) were used as support. Evaporated thin gold films were deposited on the top of those silicon carriers as a catalytic agent. After thermal treatment by Rapid Thermal Processing RTP (at various temperatures and times), which was applied to make small Au islands with the diameters of about several tens of nanometers, the substrate surfaces were observed by SEM. The Ga2O3 syntheses were made at various conditions: time, temperature and gas mixture were changed. As a result, monoclinic gallium oxide β-Ga2O3 nanostructures with dominant [1 1 1] and [0 0 2] growth directions were grown. The obtained nanostructures of several tens micrometers length were studied by SEM, PL and X-ray methods.

Ga2O3 nanowires preparation at atmospheric pressure

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

GaO nanowires preparation at atmospheric pressure

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An attempt has been undertaken to produce gallium oxide nanowires by thermal synthesis from metallic gallium source at atmospheric pressure. Silicon substrates...

Ga₂O₃ nanowires preparation at atmospheric pressure

Data publikacji: 26 lip 2017

Zakres stron: 412 - 420

Otrzymano: 19 paź 2016

Przyjęty: 13 sty 2017

DOI: https://doi.org/10.1515/msp-2017-0026

Słowa kluczowe
Ga2O3, nanowires, nanobelts, thermal synthesis, atmospheric pressure

© 2017

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Ga2O3 nanowires preparation at atmospheric pressure

Data publikacji: 26 lip 2017

Zakres stron: 412 - 420

Otrzymano: 19 paź 2016

Przyjęty: 13 sty 2017

DOI: https://doi.org/10.1515/msp-2017-0026

Słowa kluczoweGa2O3, nanowires, nanobelts, thermal synthesis, atmospheric pressure

© 2017

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Ga₂O₃ nanowires preparation at atmospheric pressure

Słowa kluczowe
Ga2O3, nanowires, nanobelts, thermal synthesis, atmospheric pressure