<abstract xmlns="http://www.w3.org/1999/xhtml">Nanoneedle structured Sn2S3 thin films were prepared by spray pyrolysis technique from aqueous solutions of tin (II) chloride and thiourea, keeping the molar concentrations of S:Sn = 0.01:0.01, 0.02:0.02, 0.03:0.03 and 0.04:0.04 in the starting solutions. XRD studies reveal that all the films exhibit orthorhombic crystal structure with a preferential orientation along the [2 1 1] direction. The peak intensity of the (2 1 1) plane is found to be maximum for the film coated with 0.02:0.02 S:Sn molar concentration which confirms the improved crystalline nature of this film. SEM images depict that the film coated with S:Sn molar concentration 0.02:0.02 exhibit needle shaped grains. The optical band gap exhibits red shift from 2.12 eV to 2.02 eV with an increase in S:Sn precursor molar concentration. Electrical studies show that the films having S:Sn molar concentrations 0.01:0.01 and 0.02:0.02 exhibit minimum resistivity values of 0.238 and 0.359Ω ·cm, respectively.© Wroclaw University of Technology.</abstract>

Nanoneedle structured Sn2S3 thin films were prepared by spray pyrolysis technique from aqueous solutions of tin (II) chloride and thiourea, keeping the molar concentrations of S:Sn = 0.01:0.01, 0.02:0.02, 0.03:0.03 and 0.04:0.04 in the starting solutions. XRD studies reveal that all the films exhibit orthorhombic crystal structure with a preferential orientation along the [2 1 1] direction. The peak intensity of the (2 1 1) plane is found to be maximum for the film coated with 0.02:0.02 S:Sn molar concentration which confirms the improved crystalline nature of this film. SEM images depict that the film coated with S:Sn molar concentration 0.02:0.02 exhibit needle shaped grains. The optical band gap exhibits red shift from 2.12 eV to 2.02 eV with an increase in S:Sn precursor molar concentration. Electrical studies show that the films having S:Sn molar concentrations 0.01:0.01 and 0.02:0.02 exhibit minimum resistivity values of 0.238 and 0.359Ω ·cm, respectively.© Wroclaw University of Technology.

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn2S3 thin films

PG and Research Department of Physics, AVVM Sri Pushpam College, Poondi-613 503, Tamilnadu, India

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase SnS thin films

Nanoneedle structured Sn2S3 thin films were prepared by spray pyrolysis technique from aqueous solutions of tin (II) chloride and thiourea, keeping the molar...

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn₂S₃ thin films

Article Category: Research Article

Data publikacji: 10 cze 2016

Zakres stron: 393 - 398

Otrzymano: 30 paź 2015

Przyjęty: 15 sty 2016

DOI: https://doi.org/10.1515/msp-2016-0035

© Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.