<abstract xmlns="http://www.w3.org/1999/xhtml"><p>SnS thin films were grown on glass substrates by a simple route named successive ion layer adsorption and reaction (SILAR) method. The films were prepared using tin chloride as tin (Sn) source and ammonium sulfide as sulphur (S) source. The structural, optical and morphological study was done using XRD, FESEM, FT-IR and UV-Vis spectrophotometer. XRD measurement confirmed the presence of orthorhombic phase. Particle size estimated from XRD was about 45 nm which fitted well with the FESEM measurement. The value of band gap was about 1.63 eV indicating that SnS can be used as an important material for thin film solar cells. The surface morphology showed a smooth, homogenous film over the substrate. Characteristic stretching vibration mode of SnS was observed in the absorption band of FT-IR spectrum. The electrical activation energy was about 0.306 eV.</p></abstract>

SnS thin films were grown on glass substrates by a simple route named successive ion layer adsorption and reaction (SILAR) method. The films were prepared using tin chloride as tin (Sn) source and ammonium sulfide as sulphur (S) source. The structural, optical and morphological study was done using XRD, FESEM, FT-IR and UV-Vis spectrophotometer. XRD measurement confirmed the presence of orthorhombic phase. Particle size estimated from XRD was about 45 nm which fitted well with the FESEM measurement. The value of band gap was about 1.63 eV indicating that SnS can be used as an important material for thin film solar cells. The surface morphology showed a smooth, homogenous film over the substrate. Characteristic stretching vibration mode of SnS was observed in the absorption band of FT-IR spectrum. The electrical activation energy was about 0.306 eV.

Structural and optical characteristics of SnS thin film prepared by SILAR

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

{"article-title":"Structural and optical characteristics of SnS thin film prepared by SILAR"}

SnS thin films were grown on glass substrates by a simple route named successive ion layer adsorption and reaction (SILAR) method. The films were prepared...

Structural and optical characteristics of SnS thin film prepared by SILAR

Data publikacji: 06 sty 2016

Zakres stron: 847 - 851

Otrzymano: 24 lut 2015

Przyjęty: 08 paź 2015

DOI: https://doi.org/10.1515/msp-2015-0118

Słowa kluczowe
SnS, SILAR, thin films, FESEM, FT-IR

© 2015 A. Mukherjee et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Structural and optical characteristics of SnS thin film prepared by SILAR

Data publikacji: 06 sty 2016

Zakres stron: 847 - 851

Otrzymano: 24 lut 2015

Przyjęty: 08 paź 2015

DOI: https://doi.org/10.1515/msp-2015-0118

Słowa kluczoweSnS, SILAR, thin films, FESEM, FT-IR

© 2015 A. Mukherjee et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Słowa kluczowe
SnS, SILAR, thin films, FESEM, FT-IR