Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

Data publikacji: 14 mar 2017

Zakres stron: 74 - 78

Otrzymano: 07 lip 2016

DOI: https://doi.org/10.1515/jee-2017-0010

Słowa kluczowe

silicon vacancy centres, photoluminescence, low temperature, diamond, CVD

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

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