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Cita

A novel approach to the preparation of thin films by using RF diode sputtering was developed. In one deposition run, thin films of doped ZnO:(Al, Ga) were obtained with different structural, optical and electrical properties. ZnO: Al films of low resistivities in order of 10-3Ωcm and high optical transmittances about 93% have appeared the most suitable for photovoltaic applications.

ISSN:
1335-3632
Lingua:
Inglese
Frequenza di pubblicazione:
6 volte all'anno
Argomenti della rivista:
Engineering, Introductions and Overviews, other