À propos de cet article
Publié en ligne: 07 juin 2011
Pages: 291 - 295
DOI: https://doi.org/10.2478/v10187-010-0043-2
Mots clés
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A novel approach to the preparation of thin films by using RF diode sputtering was developed. In one deposition run, thin films of doped ZnO:(Al, Ga) were obtained with different structural, optical and electrical properties. ZnO: Al films of low resistivities in order of 10-3Ωcm and high optical transmittances about 93% have appeared the most suitable for photovoltaic applications.