<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>The electrical properties of deep-level defects in real packaged SiC Schottky barrier rectifiers were studied by deep level transient spectroscopy (DLTS). One deep-level trap with an activation energy in the 0.29–0.30 eV range was revealed to be present in all the tested samples. The electrical characteristics of the trap indicate it is probably attributed to dislocations or to metastable defects, which can be responsible for discrepancies observed in I-V characteristics (see Ref. [2]).</p></abstract>

The electrical properties of deep-level defects in real packaged SiC Schottky barrier rectifiers were studied by deep level transient spectroscopy (DLTS). One deep-level trap with an activation energy in the 0.29–0.30 eV range was revealed to be present in all the tested samples. The electrical characteristics of the trap indicate it is probably attributed to dislocations or to metastable defects, which can be responsible for discrepancies observed in I-V characteristics (see Ref. [2]).

Electrically active defects in SiC Schottky barrier diodes

Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

{"article-title":"Electrically active defects in SiC Schottky barrier diodes"}

The electrical properties of deep-level defects in real packaged SiC Schottky barrier rectifiers were studied by deep level transient spectroscopy (DLTS). One...

Electrically active defects in SiC Schottky barrier diodes

Pubblicato online: 03 ago 2011

Pagine: 70 - 75

DOI: https://doi.org/10.2478/s13536-011-0012-x

Parole chiave
SiC, Schottky diode, deep-level defect, DLTS

© 2011 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Electrically active defects in SiC Schottky barrier diodes

Pubblicato online: 03 ago 2011

Pagine: 70 - 75

DOI: https://doi.org/10.2478/s13536-011-0012-x

Parole chiaveSiC, Schottky diode, deep-level defect, DLTS

© 2011 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Parole chiave
SiC, Schottky diode, deep-level defect, DLTS