<abstract xmlns="http://www.w3.org/1999/xhtml">In this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The samples were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and sheet resistance measurement. The XRD and Raman spectroscopy results showed that the formation of nickel and cobalt silicides (CoSi, Co2Si, Ni2Si, NiSi, NiSi2, CoSi2) is an annealing temperature dependent diffusion process. The diffusion phenomenon was evidenced by RBS. The low values of the sheet resistance which were correlated with the films surface roughness were attributed to the formation of both CoSi and NiSi phases.</abstract>

In this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The samples were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and sheet resistance measurement. The XRD and Raman spectroscopy results showed that the formation of nickel and cobalt silicides (CoSi, Co2Si, Ni2Si, NiSi, NiSi2, CoSi2) is an annealing temperature dependent diffusion process. The diffusion phenomenon was evidenced by RBS. The low values of the sheet resistance which were correlated with the films surface roughness were attributed to the formation of both CoSi and NiSi phases.

A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing

Laboratory of Research on the Physic-Chemical of Surfaces and Interfaces

Laboratory for the Elaboration of New Materials and their Characteristics

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

In this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The samples were characterized by means of X-ray diffraction...

A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing

Pubblicato online: 12 dic 2020

Pagine: 394 - 399

Ricevuto: 25 gen 2018

Accettato: 23 apr 2019

DOI: https://doi.org/10.2478/msp-2020-0057

Parole chiave
Ni/Co/Si system, nickel silicide, cobalt silicide, XRD, RBS, Raman spectroscopy, AFM

© 2020 C. Sedrati et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing

Pubblicato online: 12 dic 2020

Pagine: 394 - 399

Ricevuto: 25 gen 2018

Accettato: 23 apr 2019

DOI: https://doi.org/10.2478/msp-2020-0057

Parole chiaveNi/Co/Si system, nickel silicide, cobalt silicide, XRD, RBS, Raman spectroscopy, AFM

© 2020 C. Sedrati et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Parole chiave
Ni/Co/Si system, nickel silicide, cobalt silicide, XRD, RBS, Raman spectroscopy, AFM