<abstract xmlns="http://www.w3.org/1999/xhtml">Dilute nitride and antimony GaNAsSb alloy can be considered as an alloy formed by adding N and Sb atoms into the host material GaAs. Under this condition, its band gap energy depending on pressure can be divided into two regions. In the low pressure range, the band gap energy is due to two factors. One is the coupling interaction between the N level and the Γ conduction band minimum (CBM) of GaAs. The other one is the coupling interaction between the Sb level and the Γ valence band maximum (VBM) of GaAs. In the high pressure range, the band gap energy depends also on two factors. One is the coupling interaction between the N level and the X CBM of GaAs. The other one is the coupling interaction between the Sb level and the Γ VBM of GaAs. In addition, it has been found that the energy difference between the Γ CBM and the X CBM in GaNAsSb is larger than that in GaAs. It is due to two factors. One is the coupling interaction between the N level and the Γ CBM of GaAs. The other is the coupling interaction between the N level and the X CBM of GaAs.</abstract>

Dilute nitride and antimony GaNAsSb alloy can be considered as an alloy formed by adding N and Sb atoms into the host material GaAs. Under this condition, its band gap energy depending on pressure can be divided into two regions. In the low pressure range, the band gap energy is due to two factors. One is the coupling interaction between the N level and the Γ conduction band minimum (CBM) of GaAs. The other one is the coupling interaction between the Sb level and the Γ valence band maximum (VBM) of GaAs. In the high pressure range, the band gap energy depends also on two factors. One is the coupling interaction between the N level and the X CBM of GaAs. The other one is the coupling interaction between the Sb level and the Γ VBM of GaAs. In addition, it has been found that the energy difference between the Γ CBM and the X CBM in GaNAsSb is larger than that in GaAs. It is due to two factors. One is the coupling interaction between the N level and the Γ CBM of GaAs. The other is the coupling interaction between the N level and the X CBM of GaAs.

Pressure dependence of the band gap energy for dilute nitride and antimony GaNxSbyAs1−x−y

Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems

School of Electronics and Information Engineering, Tianjin Polytechnics University

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Pressure dependence of the band gap energy for dilute nitride and antimony GaNSbAs

Dilute nitride and antimony GaNAsSb alloy can be considered as an alloy formed by adding N and Sb atoms into the host material GaAs. Under this condition, its...

Pressure dependence of the band gap energy for dilute nitride and antimony GaN_xSb_yAs_1−x−y

Pubblicato online: 06 ott 2020

Pagine: 248 - 252

Ricevuto: 11 mag 2017

Accettato: 01 mar 2019

DOI: https://doi.org/10.2478/msp-2020-0028

Parole chiave
GaNSbAs, N level, band gap energy, Sb level, dilute nitride

© 2020 Chuan-Zhen Zhao et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Pressure dependence of the band gap energy for dilute nitride and antimony GaNxSbyAs1−x−y

Pubblicato online: 06 ott 2020

Pagine: 248 - 252

Ricevuto: 11 mag 2017

Accettato: 01 mar 2019

DOI: https://doi.org/10.2478/msp-2020-0028

Parole chiaveGaNSbAs, N level, band gap energy, Sb level, dilute nitride

© 2020 Chuan-Zhen Zhao et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Pressure dependence of the band gap energy for dilute nitride and antimony GaN_xSb_yAs_1−x−y

Parole chiave
GaNSbAs, N level, band gap energy, Sb level, dilute nitride