Ac Impedance Spectroscopy Of Al/A-Sic/C–Si(P)/Al Heterostructure under Illumination
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17 giu 2014
INFORMAZIONI SU QUESTO ARTICOLO
Pubblicato online: 17 giu 2014
Pagine: 174 - 178
Ricevuto: 24 ott 2013
DOI: https://doi.org/10.2478/jee-2014-0027
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© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology
This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
The amorphous silicon carbide/crystalline silicon heterojunction was prepared and analyzed. The current-voltage (I − V ) measurements showed the barrier properties of prepared sample. Biased impedance spectra of Al/a-SiC/c-Si(p)/Al heterojunction under the standard illumination are reported and analyzed. AC measurements in the illuminated conditions were processed in order to identify electronic behavior using equivalent AC circuit which was suggested and obtained by fitting the measured impedance data. A phenomenon of negative capacitance/resistance in certain frequency range has been observed.