<abstract xmlns="http://www.w3.org/1999/xhtml"><p>Zinc telluride (ZnTe) polycrystalline films have been grown on well-cleaned glass substrates by thermal vacuum evaporation technique using 99.99 % pure ZnTe powder as an evaporant. The samples were prepared at different substrate temperatures, rates of evaporation and thicknesses. The X-ray diffraction was used to study the structure of the films. The structures of the samples were found to be polycrystalline with preferred (1 1 1) orientation. Transmission spectra of all ZnTe films were recorded in the range of 300 nm to 2500 nm. The films were electrically characterized using Hall effect measurements at room temperature. It has been stated that the electrical resistivity, mobility and carrier concentration are strongly influenced by the substrate temperature. From the SEM results, it is clear that the surface of ZnTe is very smooth with occasional large particles on it.</p></abstract>

Zinc telluride (ZnTe) polycrystalline films have been grown on well-cleaned glass substrates by thermal vacuum evaporation technique using 99.99 % pure ZnTe powder as an evaporant. The samples were prepared at different substrate temperatures, rates of evaporation and thicknesses. The X-ray diffraction was used to study the structure of the films. The structures of the samples were found to be polycrystalline with preferred (1 1 1) orientation. Transmission spectra of all ZnTe films were recorded in the range of 300 nm to 2500 nm. The films were electrically characterized using Hall effect measurements at room temperature. It has been stated that the electrical resistivity, mobility and carrier concentration are strongly influenced by the substrate temperature. From the SEM results, it is clear that the surface of ZnTe is very smooth with occasional large particles on it.

Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system

Department of Physics, COMSATS Institute of Information Technology

Pakistan Council of Renewable Energy Technologies

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Zinc telluride (ZnTe) polycrystalline films have been grown on well-cleaned glass substrates by thermal vacuum evaporation technique using 99.99 % pure ZnTe...

Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system

Pubblicato online: 02 nov 2018

Pagine: 364 - 369

Ricevuto: 28 set 2016

Accettato: 22 mar 2018

DOI: https://doi.org/10.1515/msp-2018-0036

Parole chiave
ZnTe thin films, heat resistive materials, vacuum evaporation, electrical properties, optical and structural characterization

© 2018 M. Abbas et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system

Pubblicato online: 02 nov 2018

Pagine: 364 - 369

Ricevuto: 28 set 2016

Accettato: 22 mar 2018

DOI: https://doi.org/10.1515/msp-2018-0036

Parole chiaveZnTe thin films, heat resistive materials, vacuum evaporation, electrical properties, optical and structural characterization

© 2018 M. Abbas et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Parole chiave
ZnTe thin films, heat resistive materials, vacuum evaporation, electrical properties, optical and structural characterization