Accesso libero

Electronic structure and effective masses of TlInSe2 under pressure

INFORMAZIONI SU QUESTO ARTICOLO

Cita

G.S. Orudzhev
Institute of Physics ANAS,Baku, Azerbaijan
Azerbaijan Technical University,Baku, Azerbaijan
N.A. Ismayilova
Institute of Physics ANAS,Baku, Azerbaijan
V.N. Jafarova
Institute of Physics ANAS,Baku, Azerbaijan
eISSN:
2083-134X
Lingua:
Inglese
Frequenza di pubblicazione:
4 volte all'anno
Argomenti della rivista:
Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties