Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors

Pubblicato online: 20 mar 2018

Pagine: 893 - 902

Ricevuto: 23 ott 2017

Accettato: 12 dic 2017

DOI: https://doi.org/10.1515/msp-2017-0110

Parole chiave

dilute nitrides, quantum well, structural inhomogeneities, photodetectors

© 2018

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.