Film thickness as the time of deposition increases | Film thickness as the cathodic potential increases | ||
---|---|---|---|
Time (min) | Thickness (nm) | Cathodic potential (mV) | Thickness (nm) |
3 | 193 | 1,000 | 234 |
6 | 233 | 1,100 | 344 |
9 | 399 | 1,200 | 522 |
12 | 476 | 1,300 | 714 |
15 | 592 | 1,400 | 773 |
Semiconductor type and energy band gaps | |||||
---|---|---|---|---|---|
As time of deposition increases | As voltage increases | ||||
Time (min) | Type | Eg (eV) | Cathodic potential (mV) | Type | Eg (eV) |
3 | N | 3.30 | 1,000 | P | 3.23 |
6 | N | 3.19 | 1,100 | I-Intrinsic | 3.20 |
9 | N | 2.83 | 1,200 | N | 3.00 |
12 | N | 2.79 | 1,300 | N | 2.96 |
15 | N | 2.70 | 1,400 | N | 2.95 |