Accès libre

Measurement Systemwith Hall and a Four Point Probes for Characterization of Semiconductors

, , ,  et   
19 avr. 2013
À propos de cet article

Citez
Télécharger la couverture

[1] VAN DER PAUW, L. J. : A Method of Measuring Specific Resistivity and Hall Effect of Discs of Arbitrary Shape, Philips Research Reports, 13, 1958, 1.Search in Google Scholar

[2] MATSUMURA, T.-SATO, Y. : A Theoretical Study on Van Der Pauw Measurement Values of Inhomogeneous Compound Semiconductor Thin Films, J. Mod. Phys. 1 (2010), 340.10.4236/jmp.2010.15048Search in Google Scholar

[3] SCHUETZE, A. P. et al : Am. J. Phys. vol 72 No. 2 (Feb 2004), 49.Search in Google Scholar

[4] GREEN, R. : Hall Effect Measurements in Materials Character- ization, Keithley Instruments, Inc., Keithley Instruments, Inc. 2O11.Search in Google Scholar

[5] KINDER, R. et al : Journal of Electrical Engineering 56 (2005), 268-270.Search in Google Scholar

[6] http://four-point-probes.com/ecopia.html.Search in Google Scholar

[7] www.ecse.rpi.edu/schubert/.../A07-Specific-contact-resistance.pdf.Search in Google Scholar

[8] FLICKYNGEROVá, S.-NETRVALOVá, M.-ŠUTTA, P.- NOVOTNY, I.-TVAROŽEK, V.-GAšPIERIK, P.-BRUN- CKO, J. : Effects of Sputtering Power and Pressure on Proper- ties of ZnO:Ga Thin Films Prepared by Oblique-Angle Deposi- tion, Thin Solid Films 520 No. 4 (2011), 1233.10.1016/j.tsf.2011.06.073Search in Google Scholar

[9] MARTON, M.-IŽ á K, T.-VESELÝ, M.-VOJS, M.-MI- CHALKA, M.-BRUNCKO, J. : Effect of Argon and Substrate Bias on Diamond Thin Film Surface Morphology, Vacuum. 82 (2008), 154.10.1016/j.vacuum.2007.07.008Search in Google Scholar

[10] IŽ á K, T.-VOJS, M.-VESELÝ, M.-ŠKRINIAROVá, J.- NOVOTNÝ, I.-MICHALKA, M.-REDHAMMER, R. : Elec- trical Property Dependence on Thickness and Morphology of Nanocrystalline Diamond Thin Films, Microelectronics Journal 40 (2009), 615.10.1016/j.mejo.2008.06.095Search in Google Scholar

[11] WERNER, M.-DORSCH, O.-BAERWIND, H. U.-ERSOY, A.-OBERMEIER, E.-JOHNSTON, C. : Diamond Relat. Mater. 3 (1994), 983.10.1016/0925-9635(94)90313-1Search in Google Scholar

Langue:
Anglais
Périodicité:
6 fois par an
Sujets de la revue:
Ingénierie, Présentations et aperçus, Ingénierie, autres