The AZ 5214E Resist in EBDW Lithography and its Use as a RIE Etch–Mask in Etching Thin Ag Layers in N Plasma

In this article we describe the electron-beam direct-write (EBDW) lithography process for the AZ 5214E photoresist which is, besides its sensitivity to UV radiation, sensitive also to electrons. An adapted process flow is provided. At the same time we examine the resistance of this resist to RIE and its suitability as an etch-mask for etching thin Ag layers in N₂ plasma. A comparison with several chosen resists (PMMA, ma-2405, ma-N 1402, SU-8 2000) is provided.

ISSN:: 1335-3632
Langue:: Anglais

Périodicité:: 6 fois par an
Sujets de la revue:: Engineering, Introductions and Overviews, other

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The AZ 5214E Resist in EBDW Lithography and its Use as a RIE Etch–Mask in Etching Thin Ag Layers in N2 Plasma

Publié en ligne: 23 nov. 2013

Pages: 371 - 375

DOI: https://doi.org/10.2478/jee-2013-0056

Mots clésAZ 5214E resist, PMMA resist, image reversal, EBDW lithography, characteristic curves, RIE, etch-rates

This content is open access.

The AZ 5214E Resist in EBDW Lithography and its Use as a RIE Etch–Mask in Etching Thin Ag Layers in N₂ Plasma

Mots clés
AZ 5214E resist, PMMA resist, image reversal, EBDW lithography, characteristic curves, RIE, etch-rates