<abstract xmlns="http://www.w3.org/1999/xhtml"><p> We have designed and verified a new structure for ohmic contacts to p-GaN, mainly for applications in light emitting devices based on a layer of single-walled carbon nanotubes (SWCNT) and metallic layers of Cr and Au, namely in configuration Au/Cr/SWCNT/p-GaN. The layer of carbon nanotubes was deposited on p-GaN by spraying a solution of synthesized SWCNTs, while the layers of Cr and Au were vapour deposited. The effects of the annealing temperature and time upon the electrical properties of Au/Cr/SWCNT/p-GaN contacts have been studied. It has been found that the contact structure provides a low resistivity ohmic contact after subsequent annealing in N2 ambient at 700 °C for 1 minute.</p></abstract>

We have designed and verified a new structure for ohmic contacts to p-GaN, mainly for applications in light emitting devices based on a layer of single-walled carbon nanotubes (SWCNT) and metallic layers of Cr and Au, namely in configuration Au/Cr/SWCNT/p-GaN. The layer of carbon nanotubes was deposited on p-GaN by spraying a solution of synthesized SWCNTs, while the layers of Cr and Au were vapour deposited. The effects of the annealing temperature and time upon the electrical properties of Au/Cr/SWCNT/p-GaN contacts have been studied. It has been found that the contact structure provides a low resistivity ohmic contact after subsequent annealing in N2 ambient at 700 °C for 1 minute.

Ohmic Contacts to P–GaN Based on the Single–Walled Carbon Nanotubes

Institute of Electronics and Photonics, Slovak University of Technology, Ilkoviova 3, 812 19 Bratislava, Slovakia

Danubia NanoTech, s.r.o., Ilkoviova 3, 841 04 Bratislava, Slovakia

Journal of Electrical Engineering

{"article-title":"Ohmic Contacts to P\u2013GaN Based on the Single\u2013Walled Carbon Nanotubes"}

We have designed and verified a new structure for ohmic contacts to p-GaN, mainly for applications in light emitting devices based on a layer of single-walled...

Ohmic Contacts to P–GaN Based on the Single–Walled Carbon Nanotubes

Publié en ligne: 15 oct. 2013

Pages: 323 - 326

DOI: https://doi.org/10.2478/jee-2013-0047

Mots clés
p-GaN, single wall carbon nanotubes (SWCNT), ohmic contact, specific contact resistance, Au/Cr/SWCNT /p-GaN contact structure, RTA, Auger electron spectroscopy

This content is open access.

Ohmic Contacts to P–GaN Based on the Single–Walled Carbon Nanotubes

Publié en ligne: 15 oct. 2013

Pages: 323 - 326

DOI: https://doi.org/10.2478/jee-2013-0047

Mots clésp-GaN, single wall carbon nanotubes (SWCNT), ohmic contact, specific contact resistance, Au/Cr/SWCNT /p-GaN contact structure, RTA, Auger electron spectroscopy

This content is open access.

Mots clés
p-GaN, single wall carbon nanotubes (SWCNT), ohmic contact, specific contact resistance, Au/Cr/SWCNT /p-GaN contact structure, RTA, Auger electron spectroscopy