<abstract xmlns="http://www.w3.org/1999/xhtml">In this work, the In2O3 thin films have been fabricated using a spin coating technique; this technique was prepared in our laboratory. The effect of the layer times (3, 5, 7 and 9 times) on optical and structural properties was investigated. In2O3 thin films were fabricated by dissolving 0.2 M of the indium chloride dehydrate InCl3.2H2O in the absolute H2O. The In2O3 thin films were crystallized at a temperature of 600 °C with pending time of 1 hour. The optical property shows that the prepared In2O3 thin films for 3 and 5 times have a transmission of about 85 %. The maximum bandgap energy was 3.69 eV for 5 times and the lowest Urbach energy was 0.47 eV for 9 times. From XDR all fabricated In2O3 thin films having one diffraction crystal plan is (222) peak intensity, this attribution have good crystalline structure with minimum crystallite size of the (222) plan is 59.69 nm. The prepared In2O3 thin films can be used in photovoltaic applications due to the existing phase and higher transmission.</abstract>

In this work, the In2O3 thin films have been fabricated using a spin coating technique; this technique was prepared in our laboratory. The effect of the layer times (3, 5, 7 and 9 times) on optical and structural properties was investigated. In2O3 thin films were fabricated by dissolving 0.2 M of the indium chloride dehydrate InCl3.2H2O in the absolute H2O. The In2O3 thin films were crystallized at a temperature of 600 °C with pending time of 1 hour. The optical property shows that the prepared In2O3 thin films for 3 and 5 times have a transmission of about 85 %. The maximum bandgap energy was 3.69 eV for 5 times and the lowest Urbach energy was 0.47 eV for 9 times. From XDR all fabricated In2O3 thin films having one diffraction crystal plan is (222) peak intensity, this attribution have good crystalline structure with minimum crystallite size of the (222) plan is 59.69 nm. The prepared In2O3 thin films can be used in photovoltaic applications due to the existing phase and higher transmission.

Spin Coating Method Fabricated of In2O3 Thin Films

Material Sciences Department, Faculty of Science

Annals of West University of Timisoara - Physics

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Spin Coating Method Fabricated of InO Thin Films

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In this work, the In2O3 thin films have been fabricated using a spin coating technique; this technique was prepared in our laboratory. The effect of the layer...

Spin Coating Method Fabricated of In₂O₃ Thin Films

Publié en ligne: 21 janv. 2020

Pages: 56 - 63

Reçu: 17 déc. 2019

Accepté: 06 janv. 2020

DOI: https://doi.org/10.2478/awutp-2019-0005

Mots clés
InO, Thin films, Spain coater method, Crystalline structure, Transmission

© 2019 Said Benramache et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Spin Coating Method Fabricated of In2O3 Thin Films

Publié en ligne: 21 janv. 2020

Pages: 56 - 63

Reçu: 17 déc. 2019

Accepté: 06 janv. 2020

DOI: https://doi.org/10.2478/awutp-2019-0005

Mots clésInO, Thin films, Spain coater method, Crystalline structure, Transmission

© 2019 Said Benramache et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Spin Coating Method Fabricated of In₂O₃ Thin Films

Mots clés
InO, Thin films, Spain coater method, Crystalline structure, Transmission