<abstract xmlns="http://www.w3.org/1999/xhtml">In this paper we study the Dirac equation in the geometry of a (regular) Bardeen black hole. We will focus on finding new analytical solutions in the vicinity of the black hole horizon. These solutions can be used with the asymptotic solutions (derived in a previous paper) to compute numerical phase shifts that define the scattering amplitudes.</abstract>

Solutions of the Dirac Equation in a Bardeen Black Hole Geometry

<abstract xmlns="http://www.w3.org/1999/xhtml">We have explored the effectiveness of Geant4 by using it to simulate phonon conduction in Sn Host with Si Nanowire Interface. Our Monte Carlo Simulation shows that the effectiveness of the phonon conduction Geant4 simulation increases when the system attained a steady state of 100 time steps. We have simulated phonon conduction in Sn host with Si nanowire interface using a Geant4Condensed Matter Physics Monte Carlo simulation toolkit in a low cost and less powerful processing computer machine. In the simulation, phonons were displaced inside a computation domain from their initial positions with the velocities and direction vectors assigned to them. A time step was selected so that a phonon can move at most the length of one sub-cell in one time step. Our phonon conduction analysis of SiSn based alloy using Geant4 showed performance enhancement and reasonable predicted thermal values. Numerical predictions of the thermal profile simulations of the values of the temperature in each cell were all within ten percent of the average temperature of Silicon – Tin.</abstract>

Department of Physics and Engineering Physics

Effectiveness of Geant4 in Monte Carlo Simulation Studyofphonon Conduction in Sn Host with Si Nanowire Interface

<abstract xmlns="http://www.w3.org/1999/xhtml">The effect of germanium trapezoidal profile shape on the direct current (DC) current gain (<italic>β</italic>F), cut-off frequency (<italic>f</italic>T) and maximum oscillation frequency (<italic>f</italic>MAX) of silicon-germanium (SiGe) hetero-junction bipolar transistors (HBTs) has been investigated. The energy balance (EB), hydrodynamic (HD) and drift-diffusion (DD) physical transport models in SILVACO technology computer aided design (T-CAD) simulator were used. It was found that the current gain values using energy balance model are higher than hydrodynamic and much higher than those corresponding to drift-diffusion. Moreover, decreasing the germanium gradient slope towards the collector side of the base enhances the maximum oscillation frequencies using HD and EB models whilst, they remain stable for DD model.</abstract>

Laboratory of metallic and semiconducting materials

Materials Science and Informatics Laboratory

Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors

<abstract xmlns="http://www.w3.org/1999/xhtml">The effect of germanium trapezoidal profile shape on the direct current (DC) current gain (βF), cut-off frequency (fT) and maximum oscillation frequency (fMAX) of silicon-germanium (SiGe) hetero-junction bipolar transistors (HBTs) has been investigated. The energy balance (EB), hydrodynamic (HD) and drift-diffusion (DD) physical transport models in SILVACO technology computer aided design (T-CAD) simulator were used. It was found that the current gain values using energy balance model are higher than hydrodynamic and much higher than those corresponding to drift-diffusion. Moreover, decreasing the germanium gradient slope towards the collector side of the base enhances the maximum oscillation frequencies using HD and EB models whilst, they remain stable for DD model.</abstract>

National Institute for Research and Development in Electrochemistry and Condensed Matter

Removal of Methylene Blue by Activated Glass Foams with TiO2 in Dark and Simulated Solar Light

<abstract xmlns="http://www.w3.org/1999/xhtml">In this paper, we performed a first principle study for new half-Heusler LiSrX(X= N, P, and As) working with WIEN2k code in the frame work of the density functional theory, and the Boltzmann theory. We estimated the exchange-correlation potential by the generalized gradient approximation (GGA). Energetically, the three compounds show a high stability in structure type2, we notice that the lattice constant increased while bulk modulus decreased in replacing the ions of size increasing. Based on our calculations, LiSrN, LiSrP, and LiSrAs compounds are mechanically stable, and show semiconductor nature with indirect band gaps of 1.21, 1.75 for LiSrN and LiSrAs, and direct band gap of 1.94 eV for LiSrP. The thermoelectric properties are calculated for LiSrX (X=N, P, and As) and they found a high power factor for the p-type doping concentration.</abstract>

Condensed Matter and sustainable development Laboratory (LMCDD)

“Gh.Asachi” Technical University Iasi

Electronic and Thermoelectric Properties in Li-Based Half-Heusler Compounds: A First Principle Study

<abstract xmlns="http://www.w3.org/1999/xhtml">In this work, the In2O3 thin films have been fabricated using a spin coating technique; this technique was prepared in our laboratory. The effect of the layer times (3, 5, 7 and 9 times) on optical and structural properties was investigated. In2O3 thin films were fabricated by dissolving 0.2 M of the indium chloride dehydrate InCl3.2H2O in the absolute H2O. The In2O3 thin films were crystallized at a temperature of 600 °C with pending time of 1 hour. The optical property shows that the prepared In2O3 thin films for 3 and 5 times have a transmission of about 85 %. The maximum bandgap energy was 3.69 eV for 5 times and the lowest Urbach energy was 0.47 eV for 9 times. From XDR all fabricated In2O3 thin films having one diffraction crystal plan is (222) peak intensity, this attribution have good crystalline structure with minimum crystallite size of the (222) plan is 59.69 nm. The prepared In2O3 thin films can be used in photovoltaic applications due to the existing phase and higher transmission.</abstract>

Material Sciences Department, Faculty of Science

Spin Coating Method Fabricated of In2O3 Thin Films

<abstract xmlns="http://www.w3.org/1999/xhtml">We investigated the structural and optical properties of zinc oxide (ZnO) thin film as the n-type semiconductor. In this work, the sol–gel method used to fabricate ZnO thin film on glass substrate with 0.5 mol/l of zinc acetate dehydrates. The crystals quality of the thin film analyzed by X-ray diffraction and the optical transmittance was carried out by an ultraviolet-visible spectrophotometer. The DRX analyses indicated that ZnO film have polycrystalline nature and hexagonal wurtzite structure with (002) preferential orientation and the measured average crystallite size of ZnO of 207.9 nm. The thin film exhibit average optical transparency about 90 %, in the visible region, found that optical band gap energy was 3.282 eV, the Urbach energy also was calculated from optical transmittance to optimal value is 196.7 meV.</abstract>

Fabrication and Characterisation of ZnO Thin Film by Sol–Gel Technique

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Annals of West University of Timisoara - Physics

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Annals of West University of Timisoara - Physics

Volume 61 (2019): Issue 1 (December 2019)

Solutions of the Dirac Equation in a Bardeen Black Hole Geometry

Effectiveness of Geant4 in Monte Carlo Simulation Studyofphonon Conduction in Sn Host with Si Nanowire Interface

Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors

Removal of Methylene Blue by Activated Glass Foams with TiO₂ in Dark and Simulated Solar Light

Electronic and Thermoelectric Properties in Li-Based Half-Heusler Compounds: A First Principle Study

Spin Coating Method Fabricated of In₂O₃ Thin Films

Fabrication and Characterisation of ZnO Thin Film by Sol–Gel Technique

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