<abstract xmlns="http://www.w3.org/1999/xhtml"><p>A set of structures with nanocrystalline-Si/Si interfaces formed on p-type Si substrate appropriated for photovoltaic application was prepared. The Acoustic DLTS technique based on the acoustoelectric response signal produced by the structure when a longitudinal acoustic wave propagates through the structure was used together with electric characterization to determine deep defects and the role of both individual layers. Several kinds of interface deep centers with activation energies typical for dangling bonds, oxygen participated Si or point defects were observed as well as a particular influence of individual layers on the interface states. The obtained results are analyzed, discussed and subsequently compared.</p></abstract>

A set of structures with nanocrystalline-Si/Si interfaces formed on p-type Si substrate appropriated for photovoltaic application was prepared. The Acoustic DLTS technique based on the acoustoelectric response signal produced by the structure when a longitudinal acoustic wave propagates through the structure was used together with electric characterization to determine deep defects and the role of both individual layers. Several kinds of interface deep centers with activation energies typical for dangling bonds, oxygen participated Si or point defects were observed as well as a particular influence of individual layers on the interface states. The obtained results are analyzed, discussed and subsequently compared.

Investigation of deep defects in nanocrystalline-Si/Si interfaces using acoustic spectroscopy

Department of Physics, Faculty of Electrical Engineering

Institute of Scientific and Industrial Research

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

A set of structures with nanocrystalline-Si/Si interfaces formed on p-type Si substrate appropriated for photovoltaic application was prepared. The Acoustic...

Investigation of deep defects in nanocrystalline-Si/Si interfaces using acoustic spectroscopy

Publié en ligne: 29 déc. 2017

Pages: 43 - 47

Reçu: 23 avr. 2017

DOI: https://doi.org/10.1515/jee-2017-0054

Mots clés
nanocrystalline-Si/Si interfaces, acoustic DLTS, deep defects

© 2017 Peter Bury et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Investigation of deep defects in nanocrystalline-Si/Si interfaces using acoustic spectroscopy

Publié en ligne: 29 déc. 2017

Pages: 43 - 47

Reçu: 23 avr. 2017

DOI: https://doi.org/10.1515/jee-2017-0054

Mots clésnanocrystalline-Si/Si interfaces, acoustic DLTS, deep defects

© 2017 Peter Bury et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Mots clés
nanocrystalline-Si/Si interfaces, acoustic DLTS, deep defects