Theoretical prediction of physical parameters of GexSb20−x Te80 (x = 11, 13, 15, 17, 19) bulk glassy alloys

Publicado en línea: 19 dic 2014

Páginas: 661 - 668

DOI: https://doi.org/10.2478/s13536-014-0249-2

Palabras clave

amorphous semiconductors, mean bond energy, glass transition temperature, cohesive energy, theoretical band gap

© 2014 Wroclaw University of Technology

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