Theoretical prediction of physical parameters of GexSb20−x Te80 (x = 11, 13, 15, 17, 19) bulk glassy alloys

Online veröffentlicht: 19. Dez. 2014

Seitenbereich: 661 - 668

DOI: https://doi.org/10.2478/s13536-014-0249-2

Schlüsselwörter

amorphous semiconductors, mean bond energy, glass transition temperature, cohesive energy, theoretical band gap

© 2014 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.