<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>Atomic force microscopy and Quantitative Mobility Spectrum Analysis (QMSA) were applied for characterization and evaluation of the quality of AlGaN/GaN heterostructures. The structural uniformity, growth mode and electrical properties of the heterostructures were determined. The obtained results indicated that the time of growth of the low temperature GaN nucleation layer influenced the morphology and electrical properties of the AlGaN/GaN heterostructure.</p></abstract>

Atomic force microscopy and Quantitative Mobility Spectrum Analysis (QMSA) were applied for characterization and evaluation of the quality of AlGaN/GaN heterostructures. The structural uniformity, growth mode and electrical properties of the heterostructures were determined. The obtained results indicated that the time of growth of the low temperature GaN nucleation layer influenced the morphology and electrical properties of the AlGaN/GaN heterostructure.

Evaluation of AlGaN/GaN heterostructures properties by QMSA and AFM techniques

Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego Street 11/17, 50-372, Wroclaw, Poland

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

{"article-title":"Evaluation of AlGaN/GaN heterostructures properties by QMSA and AFM techniques"}

Atomic force microscopy and Quantitative Mobility Spectrum Analysis (QMSA) were applied for characterization and evaluation of the quality of AlGaN/GaN...

Evaluation of AlGaN/GaN heterostructures properties by QMSA and AFM techniques

Publicado en línea: 15 dic 2013

Páginas: 543 - 547

DOI: https://doi.org/10.2478/s13536-013-0135-3

Palabras clave
AlGaN/GaN, Hall mobility, AFM, Quantive Mobility Spectrum Analysis

© 2013 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Evaluation of AlGaN/GaN heterostructures properties by QMSA and AFM techniques

Publicado en línea: 15 dic 2013

Páginas: 543 - 547

DOI: https://doi.org/10.2478/s13536-013-0135-3

Palabras claveAlGaN/GaN, Hall mobility, AFM, Quantive Mobility Spectrum Analysis

© 2013 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Palabras clave
AlGaN/GaN, Hall mobility, AFM, Quantive Mobility Spectrum Analysis