<abstract xmlns="http://www.w3.org/1999/xhtml">In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique. Electrical characteristics of the samples were investigated with the current-voltage (I-V), capacitance-voltage/frequency (C-V/f), and conductancevoltage (G/V) measurements at room temperature. Also, Cu/n-Si/Al Schottky contact was produced as a reference sample to investigate the electrical properties of the samples. The values of ideality factor (n), barrier height ( Φb) and series resistance (Rs) of the samples were calculated from the forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. Also, for checking the consistency of the results, Cheung and Norde functions were used. The experimental result values of CuO/n-Si contact were compared with the values of the reference Cu/n-Si Schottky diode. It was observed that the values of the ideality factor and barrier height of the CuO/n-Si heterojunction were higher than those of the Cu/n-Si Schottky contact, while the series resistance was lower. Also, it has been observed that the value of capacitance decreased with increasing frequency and after a certain value of frequency it was almost constant. The ideality factor of CuO/n-Si/Al heterostructure is about 2.40 and so, it is not close to the ideal behavior.</abstract>

In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique. Electrical characteristics of the samples were investigated with the current-voltage (I-V), capacitance-voltage/frequency (C-V/f), and conductancevoltage (G/V) measurements at room temperature. Also, Cu/n-Si/Al Schottky contact was produced as a reference sample to investigate the electrical properties of the samples. The values of ideality factor (n), barrier height ( Φb) and series resistance (Rs) of the samples were calculated from the forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. Also, for checking the consistency of the results, Cheung and Norde functions were used. The experimental result values of CuO/n-Si contact were compared with the values of the reference Cu/n-Si Schottky diode. It was observed that the values of the ideality factor and barrier height of the CuO/n-Si heterojunction were higher than those of the Cu/n-Si Schottky contact, while the series resistance was lower. Also, it has been observed that the value of capacitance decreased with increasing frequency and after a certain value of frequency it was almost constant. The ideality factor of CuO/n-Si/Al heterostructure is about 2.40 and so, it is not close to the ideal behavior.

Comparison of electrical properties of CuO/n-Si contacts with Cu/n-Si

Department of Physics, Faculty of Sciences

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

{"article-title":"Comparison of electrical properties of CuO/n-Si contacts with Cu/n-Si"}

In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique. Electrical characteristics of the samples were...

Comparison of electrical properties of CuO/n-Si contacts with Cu/n-Si

Publicado en línea: 12 dic 2020

Páginas: 475 - 483

Recibido: 08 dic 2018

Aceptado: 23 abr 2019

DOI: https://doi.org/10.2478/msp-2020-0051

Palabras clave
CuO, heterojunction, thermal evaporation, electrical properties

© 2020 Reşit Özmenteş et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Comparison of electrical properties of CuO/n-Si contacts with Cu/n-Si

Publicado en línea: 12 dic 2020

Páginas: 475 - 483

Recibido: 08 dic 2018

Aceptado: 23 abr 2019

DOI: https://doi.org/10.2478/msp-2020-0051

Palabras claveCuO, heterojunction, thermal evaporation, electrical properties

© 2020 Reşit Özmenteş et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Palabras clave
CuO, heterojunction, thermal evaporation, electrical properties