<abstract xmlns="http://www.w3.org/1999/xhtml"><p>In this work black silicon (b-Si) samples were prepared by anodic (electrochemical) etching of p-type silicon substrate in solution of hydrofluoric acid (HF). We studied influence of anodic etching conditions (etching time, electrical potential and current) on the spectral reflectance and Raman scattering spectra. Optical properties of b-Si structures were experimentally studied by UV-VIS (AvaSpec-2048) and Raman (Thermo DXR Raman) spectrometers. B-Si layer thickness of formed substrate were determined by using SCOUT software. Effective medium approximation theory (Looyenga) was used in construction of the reflectance model. Influence of the deformation of crystal lattice introduced during the substrate etching was studied by Raman scattering method. Teoretical model of the 1<sup>st</sup> order Raman scattering profile was constructed by using pseudo-Voigt function and the profile parameters were extracted. The values of biaxial tensile stress were estimated by using optimized Raman profile parameters.</p></abstract>

In this work black silicon (b-Si) samples were prepared by anodic (electrochemical) etching of p-type silicon substrate in solution of hydrofluoric acid (HF). We studied influence of anodic etching conditions (etching time, electrical potential and current) on the spectral reflectance and Raman scattering spectra. Optical properties of b-Si structures were experimentally studied by UV-VIS (AvaSpec-2048) and Raman (Thermo DXR Raman) spectrometers. B-Si layer thickness of formed substrate were determined by using SCOUT software. Effective medium approximation theory (Looyenga) was used in construction of the reflectance model. Influence of the deformation of crystal lattice introduced during the substrate etching was studied by Raman scattering method. Teoretical model of the 1st order Raman scattering profile was constructed by using pseudo-Voigt function and the profile parameters were extracted. The values of biaxial tensile stress were estimated by using optimized Raman profile parameters.

Thickness and tensile stress determination of black silicon layers by spectral reflectance and Raman scattering

Institute of Aurel Stodola, Faculty of Electrical Engineering

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

In this work black silicon (b-Si) samples were prepared by anodic (electrochemical) etching of p-type silicon substrate in solution of hydrofluoric acid (HF)....

Thickness and tensile stress determination of black silicon layers by spectral reflectance and Raman scattering

Publicado en línea: 28 sept 2019

Páginas: 51 - 57

Recibido: 19 mar 2019

DOI: https://doi.org/10.2478/jee-2019-0041

Palabras clave
Raman scattering, porous silicon, black silicon, spectral reflectance, anodic etching, electrochemical etching, SCOUT

© 2019 Martin Králik et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Thickness and tensile stress determination of black silicon layers by spectral reflectance and Raman scattering

Publicado en línea: 28 sept 2019

Páginas: 51 - 57

Recibido: 19 mar 2019

DOI: https://doi.org/10.2478/jee-2019-0041

Palabras claveRaman scattering, porous silicon, black silicon, spectral reflectance, anodic etching, electrochemical etching, SCOUT

© 2019 Martin Králik et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Palabras clave
Raman scattering, porous silicon, black silicon, spectral reflectance, anodic etching, electrochemical etching, SCOUT