<abstract xmlns="http://www.w3.org/1999/xhtml"><p> Electrical properties of recessed and non-recessed AlGaN/GaN Schottky diodes under off-state stress were investigated. The samples were consecutively stressed by the stepped negative bias (−60 V). Before and after the stress I−V and C−V characteristics were evaluated to verify the device degradation process. Finally, the degradation mechanism and the influence of AlGaN recessed layer thickness on the electrical properties of the Schottky diodes were analysed. It was found that the short time stress influence on I−V characteristics was most negligible for the non-recessed sample. Shallow and deep recessed samples exhibited initial trap filling and reverse current decrease. Generally it was found that the stress voltage near 60 V caused recoverable device degradation</p></abstract>

Electrical properties of recessed and non-recessed AlGaN/GaN Schottky diodes under off-state stress were investigated. The samples were consecutively stressed by the stepped negative bias (−60 V). Before and after the stress I−V and C−V characteristics were evaluated to verify the device degradation process. Finally, the degradation mechanism and the influence of AlGaN recessed layer thickness on the electrical properties of the Schottky diodes were analysed. It was found that the short time stress influence on I−V characteristics was most negligible for the non-recessed sample. Shallow and deep recessed samples exhibited initial trap filling and reverse current decrease. Generally it was found that the stress voltage near 60 V caused recoverable device degradation

Electrical Properties of Recessed Algan/Gan Schottky Diodes Under off–State Stress

Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Electrical properties of recessed and non-recessed AlGaN/GaN Schottky diodes under off-state stress were investigated. The samples were consecutively stressed...

Electrical Properties of Recessed Algan/Gan Schottky Diodes Under off–State Stress

Publicado en línea: 05 nov 2014

Páginas: 313 - 316

Recibido: 15 jun 2014

DOI: https://doi.org/10.2478/jee-2014-0051

Palabras clave
AlGaN/GaN Schottky diode, 2DEG, off-state stress, traps, recess

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Electrical Properties of Recessed Algan/Gan Schottky Diodes Under off–State Stress

Publicado en línea: 05 nov 2014

Páginas: 313 - 316

Recibido: 15 jun 2014

DOI: https://doi.org/10.2478/jee-2014-0051

Palabras claveAlGaN/GaN Schottky diode, 2DEG, off-state stress, traps, recess

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Palabras clave
AlGaN/GaN Schottky diode, 2DEG, off-state stress, traps, recess