Numerical Study of Thermal Dissipation Processes in Silicon

Publicado en línea: 01 nov 2022

Páginas: 5 - 13

Recibido: 01 may 2020

Aceptado: 01 jun 2020

DOI: https://doi.org/10.2478/bhee-2020-0001

Palabras clave

phonons, thermal properties, Boltzmann transport, scattering rates, CMOS, MOSFET

© 2020 Zlatan Akšamija, published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.