Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors
20 mar 2018
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Publicado en línea: 20 mar 2018
Páginas: 893 - 902
Recibido: 23 oct 2017
Aceptado: 12 dic 2017
DOI: https://doi.org/10.1515/msp-2017-0110
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© 2018
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
Pucicki, D.
Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technolgy, Janiszewskiego 11/17, 50-372Wroclaw, Poland