<abstract xmlns="http://www.w3.org/1999/xhtml">The cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM) and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm-1 to 1900 cm-1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing) of metallophthalocyanine (α and β form) from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.</abstract>

The cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM) and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm-1 to 1900 cm-1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing) of metallophthalocyanine (α and β form) from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.

Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

University of Technology and Life Sciences

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

The cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force...

Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

Article Category: Research Article

Publicado en línea: 28 sept 2016

Páginas: 676 - 683

Recibido: 22 feb 2016

Aceptado: 09 jul 2016

DOI: https://doi.org/10.1515/msp-2016-0086

Palabras clave
copper phthalocyanine, Raman spectroscopy, molecular orientation, atomic force microscopy, heat treatment

© 2016 R. Skonieczny et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

Article Category: Research Article

Publicado en línea: 28 sept 2016

Páginas: 676 - 683

Recibido: 22 feb 2016

Aceptado: 09 jul 2016

DOI: https://doi.org/10.1515/msp-2016-0086

Palabras clavecopper phthalocyanine, Raman spectroscopy, molecular orientation, atomic force microscopy, heat treatment

© 2016 R. Skonieczny et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Palabras clave
copper phthalocyanine, Raman spectroscopy, molecular orientation, atomic force microscopy, heat treatment