<abstract xmlns="http://www.w3.org/1999/xhtml">This paper is dedicated to electro-physical characterisation of a GaAs p-i-n structure grown for solar cell applications, which was carried out by light and dark current-voltage (<italic>I</italic>–<italic>V</italic>) and Deep Level Transient Fourier Spectroscopy (DLTFS) methods. The conversion efficiency and open-circuit voltage were determined from <italic>I</italic>–<italic>V</italic> measurement at 1 and 20× sun light concentrations. Three electron like defects TAn1, TAn2, TDn and one hole like defect TBp obtained by DLTFS measurements were confirmed. The origin of these defect states was stated as native GaAs impurities.</abstract>

This paper is dedicated to electro-physical characterisation of a GaAs p-i-n structure grown for solar cell applications, which was carried out by light and dark current-voltage (I–V) and Deep Level Transient Fourier Spectroscopy (DLTFS) methods. The conversion efficiency and open-circuit voltage were determined from I–V measurement at 1 and 20× sun light concentrations. Three electron like defects TAn1, TAn2, TDn and one hole like defect TBp obtained by DLTFS measurements were confirmed. The origin of these defect states was stated as native GaAs impurities.

Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications

Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava,

Wrocław University of Science and Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372, Wrocław,

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

This paper is dedicated to electro-physical characterisation of a GaAs p-i-n structure grown for solar cell applications, which was carried out by light and...

Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications

Publicado en línea: 02 nov 2016

Páginas: 377 - 382

Recibido: 14 jun 2016

DOI: https://doi.org/10.1515/jee-2016-0054

Palabras clave
solar cell, GaAs concentrator solar cell, – measurement, DLTFS, defects

© 2016 Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications

Publicado en línea: 02 nov 2016

Páginas: 377 - 382

Recibido: 14 jun 2016

DOI: https://doi.org/10.1515/jee-2016-0054

Palabras clavesolar cell, GaAs concentrator solar cell, – measurement, DLTFS, defects

© 2016 Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Palabras clave
solar cell, GaAs concentrator solar cell, – measurement, DLTFS, defects