<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>This report concerns the properties of an interface formed between Pd films deposited onto the surface of (0001)-oriented n-type GaN at room temperature (RT) under ultrahigh vacuum. The surface of clean substrate and the stages of Pd-film growth were characterized in situ by X-ray photoelectron spectroscopy (XPS), scanning tunneling microscopy (STM), ultraviolet photoelectron spectroscopy (UPS), and low energy electron diffraction (LEED).</p><p>As-deposited Pd films are grainy, cover the substrate surface uniformly and reproduce its topography. Electron affinity of the clean n-GaN surface amounts to 3.1 eV. The work function of the Pd-film is equal to 5.3 eV. No chemical interaction has been found at the Pd/GaN interface formed at RT. The Schottky barrier height of the Pd/GaN contact is equal to 1.60 eV.</p></abstract>

This report concerns the properties of an interface formed between Pd films deposited onto the surface of (0001)-oriented n-type GaN at room temperature (RT) under ultrahigh vacuum. The surface of clean substrate and the stages of Pd-film growth were characterized in situ by X-ray photoelectron spectroscopy (XPS), scanning tunneling microscopy (STM), ultraviolet photoelectron spectroscopy (UPS), and low energy electron diffraction (LEED).As-deposited Pd films are grainy, cover the substrate surface uniformly and reproduce its topography. Electron affinity of the clean n-GaN surface amounts to 3.1 eV. The work function of the Pd-film is equal to 5.3 eV. No chemical interaction has been found at the Pd/GaN interface formed at RT. The Schottky barrier height of the Pd/GaN contact is equal to 1.60 eV.

Pd/GaN(0001) interface properties

Institute of Experimental Physics, University of Wroclaw, pl. Maxa Borna 9, 50-204, Wrocław, Poland

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

{"article-title":"Pd/GaN(0001) interface properties"}

This report concerns the properties of an interface formed between Pd films deposited onto the surface of (0001)-oriented n-type GaN at room temperature (RT)...

Pd/GaN(0001) interface properties

Online veröffentlicht: 22. Juli 2014

Seitenbereich: 252 - 256

DOI: https://doi.org/10.2478/s13536-013-0183-8

Schlüsselwörter
gallium nitride, palladium, metal-semiconductor junction

© 2014 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Pd/GaN(0001) interface properties

Online veröffentlicht: 22. Juli 2014

Seitenbereich: 252 - 256

DOI: https://doi.org/10.2478/s13536-013-0183-8

Schlüsselwörtergallium nitride, palladium, metal-semiconductor junction

© 2014 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Schlüsselwörter
gallium nitride, palladium, metal-semiconductor junction