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Materials Science-Poland
Volume 32 (2014): Issue 2 (June 2014)
Open Access
Pd/GaN(0001) interface properties
M. Grodzicki
M. Grodzicki
,
P. Mazur
P. Mazur
,
S. Zuber
S. Zuber
,
J. Pers
J. Pers
and
A. Ciszewski
A. Ciszewski
| Jul 22, 2014
Materials Science-Poland
Volume 32 (2014): Issue 2 (June 2014)
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Published Online:
Jul 22, 2014
Page range:
252 - 256
DOI:
https://doi.org/10.2478/s13536-013-0183-8
Keywords
gallium nitride
,
palladium
,
metal-semiconductor junction
© 2014 Wroclaw University of Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
M. Grodzicki
Institute of Experimental Physics, University of Wroclaw, pl. Maxa Borna 9, 50-204, Wrocław, Poland
P. Mazur
Institute of Experimental Physics, University of Wroclaw, pl. Maxa Borna 9, 50-204, Wrocław, Poland
S. Zuber
Institute of Experimental Physics, University of Wroclaw, pl. Maxa Borna 9, 50-204, Wrocław, Poland
J. Pers
Institute of Experimental Physics, University of Wroclaw, pl. Maxa Borna 9, 50-204, Wrocław, Poland
A. Ciszewski
Institute of Experimental Physics, University of Wroclaw, pl. Maxa Borna 9, 50-204, Wrocław, Poland