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Investigation of physicochemical and tribological properties of transparent oxide semiconducting thin films based on Ti-V oxides


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[1] Ohta H., Hosono H., Mater. Today, 7 (2004), 42. http://dx.doi.org/10.1016/S1369-7021(04)00288-310.1016/S1369-7021(04)00288-3Search in Google Scholar

[2] Hayashi Y. et al., Vacuum, 74 (2004), 607. http://dx.doi.org/10.1016/j.vacuum.2004.01.03310.1016/j.vacuum.2004.01.033Search in Google Scholar

[3] Granqvist C.G., Hultaker A., Thin Solid Films, 411 (2002), 1. http://dx.doi.org/10.1016/S0040-6090(02)00163-310.1016/S0040-6090(02)00163-3Search in Google Scholar

[4] Furubayashi Y. et al., Thin Solid Films, 496 (2006), 157. http://dx.doi.org/10.1016/j.tsf.2005.08.24510.1016/j.tsf.2005.08.245Search in Google Scholar

[5] Sieradzka K., Domaradzki J., Prociów E. L., Mazur M., Górnicka B., Kaczmarek D., Cent. Eur. J. Phys., 9 (2011), 313. http://dx.doi.org/10.2478/s11534-010-0094-910.2478/s11534-010-0094-9Search in Google Scholar

[6] Sieradzka K., Mazur M., Wojcieszak D., Domaradzki J., Kaczmarek D., Prociów E.L., Thin Solid Films, 520 (2012), 3472. http://dx.doi.org/10.1016/j.tsf.2011.12.05010.1016/j.tsf.2011.12.050Search in Google Scholar

[7] Grigorov K.G. et al., Surf. Sci., 605 (2011), 775. http://dx.doi.org/10.1016/j.susc.2011.01.01710.1016/j.susc.2011.01.017Search in Google Scholar

[8] Martinu L., Poitras D., J. Vac. Sci. Technol. A, 18 (2000), 2619. http://dx.doi.org/10.1116/1.131439510.1116/1.1314395Search in Google Scholar

[9] Xi J.-Q. et al., Nat. Photonics, 1 (2007), 176. Search in Google Scholar

[10] Wojcieszak D. et al., Pol. J. Chem. Technol., 14(3) (2012), 1. http://dx.doi.org/10.2478/v10026-012-0077-210.2478/v10026-012-0077-2Search in Google Scholar

[11] Wojcieszak D., Kaczmarek D., Domaradzki J., Mazur M., Int. J. Photoenergy, (2013), http://dx.doi.org/10.1155/2013/526140 10.1155/2013/526140Search in Google Scholar

[12] Domaradzki J., Baniewicz K., Mazur M., Pasierbek M., Berlicki T., Long-term stability of gasochromic effect in TiO 2: (W, Cr, Mo) thin film, IEEE Proceedings of 2011 International Students and Young Scientists Workshop” Photonics and Microsystems”, Cottbus, Germany, 8–10 July 2011, pp. 25–30. 10.1109/STYSW.2011.6155835Search in Google Scholar

[13] Domaradzki J., Wojcieszak D., Prociów E., Kaczmarek D., Winiarski A., Szade J., J. Nanosci. Nanotechno., 11(10) (2011), 8744. http://dx.doi.org/10.1166/jnn.2011.347210.1166/jnn.2011.3472Search in Google Scholar

[14] Kaczmarek D., Domaradzki J., Borkowska A., Podhorodecki A., Misiewicz J., Sieradzka K., Opt. Appl., 37(4) (2007), 433. Search in Google Scholar

[15] Song H., Peng T., Cai P., Yi H., Yan C., Catal. Lett., 113(1–2) (2007), 54. http://dx.doi.org/10.1007/s10562-006-9004-610.1007/s10562-006-9004-6Search in Google Scholar

[16] Domaradzki J., Kaczmarek D., Borkowska A., Wolcyrz M., Paszkiewicz B., Phys. Status Solidi A, 203 (2006), 2215. http://dx.doi.org/10.1002/pssa.20056601110.1002/pssa.200566011Search in Google Scholar

[17] Domaradzki J., Nitsch K., Prociow E., Kaczmarek D., Paszkiewicz B., Solid State Ionics, 176 (2005), 2177. http://dx.doi.org/10.1016/j.ssi.2004.09.06610.1016/j.ssi.2004.09.066Search in Google Scholar

[18] Chain E.E., Appl. Opt., 30 (1991), 2782. http://dx.doi.org/10.1364/AO.30.00278210.1364/AO.30.002782Search in Google Scholar

[19] Prociow E.L., Domaradzki J., Kaczmarek D., Berlicki T., Polish patent No P382163, 2007. Search in Google Scholar

[20] Kaczmarek D., Proció W E, Domaradzki J., Borkowska A., Mielcarek W., Wojcieszak D., Mat. Sci. Pol., 26(1) (2008), 113. Search in Google Scholar

[21] Klug H.P., Alexander L.E., In: H.P. Klug, L.E. Alexander (Eds.), X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials, 2nd edition, John Wiley and Sons, New York, 1974, p. 635. Search in Google Scholar

[22] Ogwu A.A., Bouquerel E., Ademosu O., Moh S., Crossan E., Placido F., Acta Mater., 53 (2005), 5151. http://dx.doi.org/10.1016/j.actamat.2005.07.03510.1016/j.actamat.2005.07.035Search in Google Scholar

[23] Sharfrin E., Zisman W. A., J. Phys. Chem., 64(5) 1960, 519. http://dx.doi.org/10.1021/j100834a00210.1021/j100834a002Search in Google Scholar

[24] Kwok D.Y., Neumann A.W., Adv. Colloid Interfac., 81 (1999), 167. http://dx.doi.org/10.1016/S0001-8686(98)00087-610.1016/S0001-8686(98)00087-6Search in Google Scholar

[25] Schroder D.K., Semiconductor material and device characterization, AWiley-Interscience Publication, New York, 1998. Search in Google Scholar

[26] Michel M.D., Mikowski A., Lepienski C.M., Foerster C.E., Serbena F.C., J. Non-Cryst. Solids, 348 (2004), 131. http://dx.doi.org/10.1016/j.jnoncrysol.2004.08.13810.1016/j.jnoncrysol.2004.08.138Search in Google Scholar

[27] Bourhis E.LE, Metayer D., J. Non-Cryst. Solids, 272 (2000), 34. http://dx.doi.org/10.1016/S0022-3093(00)00113-710.1016/S0022-3093(00)00113-7Search in Google Scholar

[28] Zisman W.A., Handbook of Adhesives, Skeist, I., Ed: van Nostrand, NewYork, 1977 Search in Google Scholar

[29] Fowkes F.M., J. Adhesion, 4 (1972), 155. http://dx.doi.org/10.1080/0021846720807221910.1080/00218467208072219Search in Google Scholar

eISSN:
2083-124X
ISSN:
2083-1331
Sprache:
Englisch
Zeitrahmen der Veröffentlichung:
4 Hefte pro Jahr
Fachgebiete der Zeitschrift:
Materialwissenschaft, andere, Nanomaterialien, Funktionelle und Intelligente Materialien, Charakterisierung und Eigenschaften von Materialien