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Francoeur S., Seong M., Mascarenhas A., Tixier S., Adamcyk M., Tiedje T. Band gap of GaAs1−xBix, 0<x<3.6%, Appl Phys Lett. 2003;82: 3874.FrancoeurS.SeongM.MascarenhasA.TixierS.AdamcykM.TiedjeT.Band gap of GaAs1−xBix, 0<x<3.6%Appl Phys Lett200382387410.1063/1.1581983Search in Google Scholar
Yoshida J, Kita T, Wada O, Oe K, Temperature dependence of GaAs1−xBix band gap studied by photoreflectance spectroscopy, Japan J Appl Phys. 2003;42;371.YoshidaJKitaTWadaOOeKTemperature dependence of GaAs1−xBix band gap studied by photoreflectance spectroscopyJapan J Appl Phys20034237110.1143/JJAP.42.371Search in Google Scholar
Fluegel B, Francoeur S, Mascarenhas A, Tixier S, Young E, Tiedje T. Giant Spin-Orbit Bowing in GaAs1−xBix, Phys Rev Lett. 2006;97:67205.FluegelBFrancoeurSMascarenhasATixierSYoungETiedjeTGiant Spin-Orbit Bowing in GaAs1−xBixPhys Rev Lett2006976720510.1103/PhysRevLett.97.067205Search in Google Scholar
Rajpalke MK, Linhart WM, Birkett M, Yu KM, Scanlon DO, Buckeridge J, et al. Growth and properties of GaSbBi alloys, Appl Phys Lett. 2013;103:142106.RajpalkeMKLinhartWMBirkettMYuKMScanlonDOBuckeridgeJGrowth and properties of GaSbBi alloysAppl Phys Lett201310314210610.1063/1.4824077Search in Google Scholar
Rajpalke MK, Linhart WM, Yu KM, Jones TS, Ashwin MJ, Veal TD. Bi flux-dependent MBE growth of GaSbBi alloys, J Crys Growth. 2015;425:241.RajpalkeMKLinhartWMYuKMJonesTSAshwinMJVealTDBi flux-dependent MBE growth of GaSbBi alloysJ Crys Growth201542524110.1016/j.jcrysgro.2015.02.093Search in Google Scholar
Rajpalke MK, Linhart WM, Birkett M, Yu KM, Alaria J, Kopaczek J. et al. High Bi content GaSbBi alloys, J Appl Phys, 2014;116:043511.RajpalkeMKLinhartWMBirkettMYuKMAlariaJKopaczekJ.High Bi content GaSbBi alloysJ Appl Phys201411604351110.1063/1.4891217Search in Google Scholar
Delorme O, Cerutti L, Tournié E, Rodriguez J-B. Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys, J Crys Growth. 2017;477:144.DelormeOCeruttiLTourniéERodriguezJ-BMolecular beam epitaxy and characterization of high Bi content GaSbBi alloysJ Crys Growth201747714410.1016/j.jcrysgro.2017.03.048Search in Google Scholar
Polak MP, Scharoch P, Kudrawiec R. First-principles calculations of bismuth induced changes in the band structure of dilute Ga-V-Bi and In-V-Bi alloys: chemical trends versus experimental data, Semicond Sci Technol. 2015;30:094001.PolakMPScharochPKudrawiecRFirst-principles calculations of bismuth induced changes in the band structure of dilute Ga-V-Bi and In-V-Bi alloys: chemical trends versus experimental dataSemicond Sci Technol20153009400110.1088/0268-1242/30/9/094001Search in Google Scholar
Polak MP, Scharoch P, Kudrawiec R, Kopaczek J, Winiarski MJ, Linhart WM, et al. Theoretical and experimental studies of electronic band structure for GaSb1−xBix in the dilute Bi regime, J Phys D Appl Phys. 2014;47:355107.PolakMPScharochPKudrawiecRKopaczekJWiniarskiMJLinhartWMTheoretical and experimental studies of electronic band structure for GaSb1−xBix in the dilute Bi regimeJ Phys D Appl Phys20144735510710.1088/0022-3727/47/35/355107Search in Google Scholar
Kopaczek J, Kudrawiec R, Linhart WM, Rajpalke MK, Yu KM, Jones TS, et al. Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance, Appl Phys Lett. 2013;103:261907.KopaczekJKudrawiecRLinhartWMRajpalkeMKYuKMJonesTSTemperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectanceAppl Phys Lett201310326190710.1063/1.4858967Search in Google Scholar
Kopaczek J, Kurdrawiec R, Linhart W, Rajpalke M, Jones T, Ashwin M, et al. Low-and high-energy photoluminescence from GaSb1−xBix with 0< x ≤ 0.042, Appl Phys Exp. 2014;7:111202.KopaczekJKurdrawiecRLinhartWRajpalkeMJonesTAshwinMLow-and high-energy photoluminescence from GaSb1−xBix with 0< x ≤ 0.042Appl Phys Exp2014711120210.7567/APEX.7.111202Search in Google Scholar
Li YH, Gong XG, Wei SH. Ab initio all-electron calculation of absolute volume deformation potentials of IV-IV, III-V, and II-VI semiconductors: The chemical trends, Phys Rev B. 2006;73:245206.LiYHGongXGWeiSHAb initio all-electron calculation of absolute volume deformation potentials of IV-IV, III-V, and II-VI semiconductors: The chemical trendsPhys Rev B20067324520610.1103/PhysRevB.73.245206Search in Google Scholar
Wei SH, Zunger A. Predicted band-gap pressure coefficients of all diamond and zinc-blende semiconductors: Chemical trends, Phys Rev B. 1996;60:5404.WeiSHZungerAPredicted band-gap pressure coefficients of all diamond and zinc-blende semiconductors: Chemical trendsPhys Rev B199660540410.1103/PhysRevB.60.5404Search in Google Scholar
Pettinari G, Polimeni A, Capizzi M, Blokland JH, Christianen PCM, Maan JC. et al. Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix, Appl Phys Lett. 2008;92:262105.PettinariGPolimeniACapizziMBloklandJHChristianenPCMMaanJC.Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBixAppl Phys Lett20089226210510.1063/1.2953176Search in Google Scholar
Fitouri H, Essouda Y, Zaied I, Rebey A, Jani BE. Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys, Opt Mater. 2015;42:67.FitouriHEssoudaYZaiedIRebeyAJaniBEPhotoreflectance and photoluminescence study of localization effects in GaAsBi alloysOpt Mater2015426710.1016/j.optmat.2014.12.020Search in Google Scholar
Zhao CZ, Li XT, Sun XD, Wang SS, Wang J. Composition dependence of the band gap energy of the Sb-rich GaBixSb1−x alloy (0≤ x≤ 0.26) described by the modified band anticrossing model, J Electron Mater. 2019;48:1599.ZhaoCZLiXTSunXDWangSSWangJComposition dependence of the band gap energy of the Sb-rich GaBixSb1−x alloy (0≤ x≤ 0.26) described by the modified band anticrossing modelJ Electron Mater201948159910.1007/s11664-018-06895-9Search in Google Scholar
Zhao CZ, Li NN, Wei T, Tang CX. Temperature and composition dependence of GaNAs(0<x≤ 0.05) before and after annealing, Chin Phys Lett. 2011;28:127801.ZhaoCZLiNNWeiTTangCXTemperature and composition dependence of GaNAs(0<x≤ 0.05) before and after annealingChin Phys Lett20112812780110.1088/0256-307X/28/12/127801Search in Google Scholar
Buyanova IA, Izadifard M, Kasic A, Arwin H, Chen WM, Xin HP. et al. Analysis of band anticrossing in GaNxP1−x alloys, Phys Rev B. 2004;70:085209.BuyanovaIAIzadifardMKasicAArwinHChenWMXinHP.Analysis of band anticrossing in GaNxP1−x alloysPhys Rev B20047008520910.1103/PhysRevB.70.085209Search in Google Scholar
Broesler R, Haller EE, Walukiewicz W, Muranaka T, Matsumoto T, Nabetani Y. Temperature dependence of the band gap of ZnSe1−xOx, Appl Phys Lett. 2009;95:151907.BroeslerRHallerEEWalukiewiczWMuranakaTMatsumotoTNabetaniYTemperature dependence of the band gap of ZnSe1−xOxAppl Phys Lett20099515190710.1063/1.3242026Search in Google Scholar
Zhao CZ, Sang S, Wei T, Wang SS, Lu KQ. The temperature dependence of the band gap energy of the dilute oxygen ZnOxSe1−x, Appl. Phys A. 2017;123:134.ZhaoCZSangSWeiTWangSSLuKQThe temperature dependence of the band gap energy of the dilute oxygen ZnOxSe1−xAppl. Phys A201712313410.1007/s00339-016-0730-3Search in Google Scholar
Zhao CZ, Zhu MM, Wang J, Wang SS, Lu KQ. The localized effect of the Bi level on the valence band in the dilute bismuth GaBixAs1−x alloy, Superlattice Microst. 2018;117:515.ZhaoCZZhuMMWangJWangSSLuKQThe localized effect of the Bi level on the valence band in the dilute bismuth GaBixAs1−x alloySuperlattice Microst201811751510.1016/j.spmi.2018.03.046Search in Google Scholar
Varshni YP. Temperature dependence of the energy gap in semiconductors, Physica. 1967;34:149.VarshniYPTemperature dependence of the energy gap in semiconductorsPhysica19673414910.1016/0031-8914(67)90062-6Search in Google Scholar
Madelung O. Semiconductors: Data Handbook. Berlin: Springer; 2004.MadelungOSemiconductors: Data HandbookBerlinSpringer200410.1007/978-3-642-18865-7Search in Google Scholar
Wang J, Zhang Y, Wang L-W. Systematic approach for simultaneously correcting the band-gap and p-d separation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation, Phys Rev B. 2015;92:045211.WangJZhangYWangL-WSystematic approach for simultaneously correcting the band-gap and p-d separation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximationPhys Rev B20159204521110.1103/PhysRevB.92.045211Search in Google Scholar
Vurgaftma I, Meyer JR, Ram-Mohan LR. Band parameters for III–V compound semiconductors and their alloys, J Appl Phys. 2001;89:5815.VurgaftmaIMeyerJRRam-MohanLRBand parameters for III–V compound semiconductors and their alloysJ Appl Phys200189581510.1063/1.1368156Search in Google Scholar