<abstract xmlns="http://www.w3.org/1999/xhtml"><p>Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are studied using Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis of the defect stacking faults, inclusions of defects and their distribution has shown that they correlate with the peak positions of the obtained Raman spectra and with the XRD data on the crystal structure</p></abstract>

Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are studied using Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis of the defect stacking faults, inclusions of defects and their distribution has shown that they correlate with the peak positions of the obtained Raman spectra and with the XRD data on the crystal structure

Investigation of Silicon Carbide Polytypes by Raman Spectroscopy

Institute of Solid State Physics, University of Latvia, 8 Ķengaraga Str., LV-1063, Rīga, LATVIA

V.E.Lashkaryov Institute of Semiconductor Physics, National Academy of Science of the Ukraine, 41 Nauki Ave., 03028, Kyiv, the UKRAINE

Latvian Journal of Physics and Technical Sciences

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

{"article-title":"Investigation of Silicon Carbide Polytypes by Raman Spectroscopy"}

Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are studied using Raman...

Investigation of Silicon Carbide Polytypes by Raman Spectroscopy

Online veröffentlicht: 16. Juli 2014

Seitenbereich: 51 - 57

DOI: https://doi.org/10.2478/lpts-2014-0019

© by G. Chikvaidze

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.