<abstract xmlns="http://www.w3.org/1999/xhtml">
Thin HfO2 films atomic layer deposited from hafnium alkyl amide and oxygen plasma were analysed using spectroscopic ellipsometry and X-ray reflectivity. Low refractive index of the material for samples with less than 30 nm thickness marks the index inhomogeneity at the first stage of growth. The transition from rising density to a more stable growth takes place at about 10 to 25 nm film thickness. HfO2 films used for resistive switching experiments demonstrate either clockwise or counterclockwise behaviour depending on the film thickness. The reason for this may be the disruption of the conductive filament at different metal-insulator interfaces, which could be favoured by several mechanisms. 
</abstract>

Thin HfO2 films atomic layer deposited from hafnium alkyl amide and oxygen plasma were analysed using spectroscopic ellipsometry and X-ray reflectivity. Low refractive index of the material for samples with less than 30 nm thickness marks the index inhomogeneity at the first stage of growth. The transition from rising density to a more stable growth takes place at about 10 to 25 nm film thickness. HfO2 films used for resistive switching experiments demonstrate either clockwise or counterclockwise behaviour depending on the film thickness. The reason for this may be the disruption of the conductive filament at different metal-insulator interfaces, which could be favoured by several mechanisms.

Inhomogeneous HfO2 layer growth at atomic layer deposition

Institute of Physics, University of Tartu

Department of Electronics, University of Valladolid

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Inhomogeneous HfO layer growth at atomic layer deposition 

Thin HfO2 films atomic layer deposited from hafnium alkyl amide and oxygen plasma were analysed using spectroscopic ellipsometry and X-ray reflectivity. Low...

Inhomogeneous HfO₂ layer growth at atomic layer deposition

Online veröffentlicht: 29. Aug. 2023

Seitenbereich: 246 - 255

Eingereicht: 11. Mai 2023

DOI: https://doi.org/10.2478/jee-2023-0031

Schlüsselwörter
hafnium thin films, spectroscopic ellipsometry, growth inhomogeneity, atomic layer deposition, packing density, resistive switching, filament formation

© 2023 Aarne Kasikov et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Inhomogeneous HfO2 layer growth at atomic layer deposition

Online veröffentlicht: 29. Aug. 2023

Seitenbereich: 246 - 255

Eingereicht: 11. Mai 2023

DOI: https://doi.org/10.2478/jee-2023-0031

Schlüsselwörterhafnium thin films, spectroscopic ellipsometry, growth inhomogeneity, atomic layer deposition, packing density, resistive switching, filament formation

© 2023 Aarne Kasikov et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Inhomogeneous HfO₂ layer growth at atomic layer deposition

Schlüsselwörter
hafnium thin films, spectroscopic ellipsometry, growth inhomogeneity, atomic layer deposition, packing density, resistive switching, filament formation