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Graphene prepared on SiC by chemical vapor deposition process at low temperature

   | 21. Okt. 2019

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Graphene preparation by the method of chemical vapour deposition on SiC substrates is described. Despite very low growth temperature (1080 °C) and with use of methane atmosphere, carbon layers in the form of multi-layer graphene were prepared. Graphene quality was verified by means of available analytical methods: Raman spectroscopy, X-ray photoelectron spectroscopy, Van der Paw method.

eISSN:
1339-309X
Sprache:
Englisch
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6 Hefte pro Jahr
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Technik, Einführungen und Gesamtdarstellungen, andere