<abstract xmlns="http://www.w3.org/1999/xhtml"><p>The present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode) and without (diode mode) supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W) on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2) plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ⋅cm (target power 120 W). The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ⋅cm (target power 120 W).</p></abstract>

The present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode) and without (diode mode) supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W) on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2) plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ⋅cm (target power 120 W). The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ⋅cm (target power 120 W).

Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

Department of Physics, University College of Engineering

Materials Science-Poland

This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

The present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode) and without...

Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

Online veröffentlicht: 24. Feb. 2017

Seitenbereich: 173 - 180

Eingereicht: 05. Juli 2016

Akzeptiert: 05. Jan. 2017

DOI: https://doi.org/10.1515/msp-2017-0022

Schlüsselwörter
Ti thin films, supported discharge/triode mode, DC magnetron sputtering, target power

© 2017 A. Kavitha, R. Kannan, S. Rajashabala

This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

Online veröffentlicht: 24. Feb. 2017

Seitenbereich: 173 - 180

Eingereicht: 05. Juli 2016

Akzeptiert: 05. Jan. 2017

DOI: https://doi.org/10.1515/msp-2017-0022

SchlüsselwörterTi thin films, supported discharge/triode mode, DC magnetron sputtering, target power

© 2017 A. Kavitha, R. Kannan, S. Rajashabala

This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Schlüsselwörter
Ti thin films, supported discharge/triode mode, DC magnetron sputtering, target power