<abstract xmlns="http://www.w3.org/1999/xhtml">BaTiO3 ceramics doped with 0.40 mol% NaNbO3 were prepared using a traditional approach by sintering at temperature of 1250 °C to 1290 °C. The prepared ceramics was characterized by very good dielectric properties, such as high dielectric constant (1.5 × 105), low dielectric loss (0.1), and good dielectric temperature stability in the −40 °C to 100 °C range for the sample sintered below 1270 °C. The dielectric characteristics obtained with XPS confirmed that Ti4+ ions remain in the state without any change. The huge increase in dielectric constant in NaNbO3 doped BaTiO3 samples occurs when large amount of Ba2+ ions are excited to a high energy bound state of Ba2+ − e or Ba+ to create electron hopping conduction. For samples with the content of NaNbO3 higher than 0.40 mol%, or sintering temperature higher than 1280 °C, compensation effect is dominated by cation vacancies with sharply decreasing dielectric constant and increased dielectric loss. The polaron effect is used to explain the relevant mechanism of giant dielectric constant appearing in the ferroelectric phase.</abstract>

BaTiO3 ceramics doped with 0.40 mol% NaNbO3 were prepared using a traditional approach by sintering at temperature of 1250 °C to 1290 °C. The prepared ceramics was characterized by very good dielectric properties, such as high dielectric constant (1.5 × 105), low dielectric loss (0.1), and good dielectric temperature stability in the −40 °C to 100 °C range for the sample sintered below 1270 °C. The dielectric characteristics obtained with XPS confirmed that Ti4+ ions remain in the state without any change. The huge increase in dielectric constant in NaNbO3 doped BaTiO3 samples occurs when large amount of Ba2+ ions are excited to a high energy bound state of Ba2+ − e or Ba+ to create electron hopping conduction. For samples with the content of NaNbO3 higher than 0.40 mol%, or sintering temperature higher than 1280 °C, compensation effect is dominated by cation vacancies with sharply decreasing dielectric constant and increased dielectric loss. The polaron effect is used to explain the relevant mechanism of giant dielectric constant appearing in the ferroelectric phase.

Colossal dielectric constant of NaNbO3 doped BaTiO3 ceramics

School of Materials Science and Engineering, Hubei University, Wuhan 430062

School of Physics and Electronic Engineering, Hubei University, Wuhan 430062

Department of Applied Sciences, University of Technology, Baghdad, Iraq

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Colossal dielectric constant of NaNbO doped BaTiO ceramics

BaTiO3 ceramics doped with 0.40 mol% NaNbO3 were prepared using a traditional approach by sintering at temperature of 1250 °C to 1290 °C. The prepared ceramics...

Colossal dielectric constant of NaNbO₃ doped BaTiO₃ ceramics

Article Category: Research Article

Online veröffentlicht: 18. Juni 2016

Seitenbereich: 322 - 329

Eingereicht: 01. Juli 2015

Akzeptiert: 14. Mai 2016

DOI: https://doi.org/10.1515/msp-2016-0065

Schlüsselwörter
BaTiO, giant dielectric constant, XPS

© Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Fig. 1

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Fig. 6

Colossal dielectric constant of NaNbO3 doped BaTiO3 ceramics

Article Category: Research Article

Online veröffentlicht: 18. Juni 2016

Seitenbereich: 322 - 329

Eingereicht: 01. Juli 2015

Akzeptiert: 14. Mai 2016

DOI: https://doi.org/10.1515/msp-2016-0065

SchlüsselwörterBaTiO, giant dielectric constant, XPS

© Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Fig. 1

Fig. 2

Fig. 3

Fig. 4

Fig. 5

Fig. 6

Colossal dielectric constant of NaNbO₃ doped BaTiO₃ ceramics

Schlüsselwörter
BaTiO, giant dielectric constant, XPS