<abstract xmlns="http://www.w3.org/1999/xhtml">Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx) films were grown on multicrystalline silicon (mc-Si) substrate by plasma enhanced chemical vapour deposition (PECVD) in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation) in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON) structure. Secondary ion mass spectroscopy (SIMS), Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES) and energy dispersive X-ray analysis (EDX) were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.</abstract>

Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx) films were grown on multicrystalline silicon (mc-Si) substrate by plasma enhanced chemical vapour deposition (PECVD) in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation) in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON) structure. Secondary ion mass spectroscopy (SIMS), Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES) and energy dispersive X-ray analysis (EDX) were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

Compositional analysis of silicon oxide/silicon nitride thin films

CRTSE, Division Développement des Dispositifs de Conversion á Semi-conducteurs. 02 Bd Frantz Fanon, BP 140 Alger 7-Merveilles 16038, Algeria

Laboratoire des semi-conducteurs et oxydes métalliques, Université des Sciences et de la Technologie Houari Boumediene, BP 32 El Alia, Bab Ezzouar Alger, Algeria

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

{"article-title":"Compositional analysis of silicon oxide/silicon nitride thin films"}

Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx) films were grown on multicrystalline silicon (mc-Si) substrate by plasma enhanced chemical vapour...

Compositional analysis of silicon oxide/silicon nitride thin films

Article Category: Research Article

Online veröffentlicht: 10. Juni 2016

Seitenbereich: 315 - 321

Eingereicht: 23. Juni 2015

Akzeptiert: 28. Apr. 2016

DOI: https://doi.org/10.1515/msp-2016-0057

© Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.