1. bookVolume 32 (2014): Issue 2 (June 2014)
Journal Details
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Format
Journal
eISSN
2083-134X
First Published
16 Apr 2011
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4 times per year
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English
access type Open Access

Pd/GaN(0001) interface properties

Published Online: 22 Jul 2014
Volume & Issue: Volume 32 (2014) - Issue 2 (June 2014)
Page range: 252 - 256
Journal Details
License
Format
Journal
eISSN
2083-134X
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Abstract

This report concerns the properties of an interface formed between Pd films deposited onto the surface of (0001)-oriented n-type GaN at room temperature (RT) under ultrahigh vacuum. The surface of clean substrate and the stages of Pd-film growth were characterized in situ by X-ray photoelectron spectroscopy (XPS), scanning tunneling microscopy (STM), ultraviolet photoelectron spectroscopy (UPS), and low energy electron diffraction (LEED).

As-deposited Pd films are grainy, cover the substrate surface uniformly and reproduce its topography. Electron affinity of the clean n-GaN surface amounts to 3.1 eV. The work function of the Pd-film is equal to 5.3 eV. No chemical interaction has been found at the Pd/GaN interface formed at RT. The Schottky barrier height of the Pd/GaN contact is equal to 1.60 eV.

Keywords

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