1. bookVolume 32 (2014): Issue 2 (June 2014)
Journal Details
License
Format
Journal
eISSN
2083-134X
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
access type Open Access

Optimization of gas injection conditions during deposition of AlN layers by novel reactive GIMS method

Published Online: 22 Jul 2014
Volume & Issue: Volume 32 (2014) - Issue 2 (June 2014)
Page range: 171 - 175
Journal Details
License
Format
Journal
eISSN
2083-134X
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Abstract

In 2011, we proposed a novel magnetron sputtering method. It involved the use of pulsed injection of working gas for the initiation and control of gas discharge during reactive sputtering of an AlN layer (Gas Injection Magnetron Sputtering — GIMS). Unfortunately, the presence of Al-Al bonds was found in XPS spectra of the AlN layers deposited by GIMS onto Si substrate. Our studies reported in this paper proved that the synchronization of time duration of the pulses of both gas injection and applied voltage, resulted in the elimination of Al-Al bonds in the AlN layer material, which was confirmed by the XPS studies. In our opinion the most probable reason of Al-Al bonds in the AlN layers deposited by the GIMS was the self-sputtering of the Al target in the final stage of the pulsed discharge.

Keywords

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