1. bookVolume 31 (2013): Issue 2 (April 2013)
Journal Details
License
Format
Journal
eISSN
2083-134X
ISSN
2083-1331
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
access type Open Access

First-principles study of doping and distribution of Si in TiC

Published Online: 20 Apr 2013
Volume & Issue: Volume 31 (2013) - Issue 2 (April 2013)
Page range: 259 - 263
Journal Details
License
Format
Journal
eISSN
2083-134X
ISSN
2083-1331
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Abstract

In this work, first principles calculations have been performed to study the doping and distribution of Si atoms in TiC lattice. The results confirm that Si atoms prefer to occupy Ti sites and their segregation on the TiC crystal surface may occur. But in the presence of carbon vacancies on the surface, Si atoms tend to be chemically adsorbed around the vacancies rather than occupy the carbon sites. It is also shown that the diffusion of Si may be very difficult in stoichiometric TiC, in particular the diffusion from bulk to surface. However, the carbon vacancies can considerably decrease the energy barrier and enhance the diffusion of Si atoms.

Keywords

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