1. bookVolume 30 (2012): Issue 3 (September 2012)
Journal Details
License
Format
Journal
eISSN
2083-134X
ISSN
2083-1331
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
access type Open Access

Influence of dielectric coverage on photovoltaic conversion of silicon solar cells obtained by epitaxial lateral overgrowth

Published Online: 14 Sep 2012
Volume & Issue: Volume 30 (2012) - Issue 3 (September 2012)
Page range: 274 - 277
Journal Details
License
Format
Journal
eISSN
2083-134X
ISSN
2083-1331
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Abstract

This work presents an analysis of the influence of SiO2 dielectric coverage of a Si substrate on the solar-cell efficiency of Si thin layers obtained by epitaxial lateral overgrowth (ELO). The layers were obtained by liquid phase epitaxy (LPE). All experiments were carried out under the following conditions: initial temperature of growth: 1193 K; temperature difference ΔT = 60 K; ambient gas: Ar; metallic solvent: Sn+Al; cooling rates: 0.5 K/min and 1 K/min. To compare the influence of the interior reflectivity of photons, we used two types of dielectric masks in a shape of a grid etched in SiO2 along the 〈110〉 and 〈112〉 directions on a p+ boron-doped (111) silicon substrate, where silicon dioxide covered 70 % and 80 % of the silicon surface, respectively. The results obtained in this work depict the correlation between the interior efficiency and percentage of SiO2 coverage of the substrate of the ELO solar cells.

Keywords

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